Comparison & highlight on the last 3D TSV technologies trends Romain Fraux

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1 Comparison & highlight on the last 3D TSV technologies trends Romain Fraux Advanced Packaging & MEMS Project Manager European 3D Summit January, 2016

2 Outline About System Plus Consulting D TSV in memory Technical review Cost review 2015 MEMS Devices integrating TSV Accelerometer IMU Ambient Light Sensor Fingerprint Sensor

3 About System Plus Consulting

4 Core Activities Reverse Costing Technology + Cost Analysis Customer Specific Catalogue Costing Tools Training

5 Each year S+C publishes 40 to 50 new reports on innovative products MEMS & Sensors Gyros/Accelerometers/IMU Oscillators/Microphones/Compass µbolometers/rf Switches/Inkjets Advanced Packaging WLP Components with TSV Embedded Devices Imaging Cameras Modules & CIS, IR Sensors & Cameras Power Electronics Si, GaN and SiC Devices Inverters & Modules LED & Optoelectronics LEDs & LED bulbs Camera Modules Systems PV Inverters Modem/Medical

6 Reverse costing reports are performed with the help of cost analysis software tools that have been developed in-house.

7 3D TSV in Memory

8 2 Major Products Integrating 3D TSV in 2015 Samsung DDR4 DRAM SK Hynix HBM Samsung 64GB RDIMM including 36 K4AAG045WD DDR4 DRAM chips AMD Radeon R9 Fury X 4GB HBM

9 AMD Fury X with SK Hynix HBM

10 SK Hynix HBM in AMD Radeon Graphic Card AMD graphic card Radeon R9 Fury X World s first HBM integrated on chip. Delivers 60% more memory bandwidth 3x the performance per watt Consumes 94% less PCB area than GDDR5. 3D component integrating HBM memories Via-middle TSV and micro-bumps connection HBM & GPU stacked onto a silicon interposer (including also via-middle TSV) GPU (594mm²) HBM 4 stacked memory dies + 1 Logic die Laminate substrate (10 layers PCB) Silicon Interposer (1011mm²)

11 Comparison with previous generation AMD RADEON R9 290X 4GB DDR5 AMD RADEON R9 Fury X 4GB HBM

12 Cost comparison with previous generation AMD RADEON R9 290X AMD RADEON R9 Fury X GPU Cost $80 $80 HBM Cost $0 $48 Interposer Cost $0 $25 Substrate & Packaging Cost $20 $30 Component Cost $100 $183 DDR5 Memory Cost $32 $0 PCB Cost $15 $5 Total Cost $147 $188

13 Component Manufacturing Supply Chain GPU Die DRAM Die DRAM Die DRAM Die DRAM Die Logic Die HBM Stack 2.5D Silicon Interposer PCB Package Substrate

14 HBM Stack: SK Hynix 3D HBM Process TSV-middle, Bottom-up filling µbump (Cu + Ni UBM) Temporary bonding (Si carrier) Wafer-level NCF underfill TCB CoW & CoC Wafer compression molding HBM Middle-End Cost Breakdown HBM Stack 4x DRAM Die + 1x Logic Die TSV-middle and Micro-Bumps Interposer TSV-middle and Flip-chip Bumps DRAM DRAM DRAM DRAM Logic Interposer µbump Diameter 16µm Pitch 40µm µbump Diameter 20µm Pitch 55µm Flip-Chip Bump Size 100µm Pitch 165µm Debonding 4% NCF Underfill 12% TSV process 31% PCB 10 Layers HDI PCB TSV Via Reveal & Back-Side UBM 16% Estimated Cost $345 BGA Bump Size 800µm Pitch 1.2mm Temporary bonding & Thinning 20% Front-Side µbump 17%

15 SK Hynix 3D HBM Process 50µm DRAM TSV DRAM Silicon Substrate 2 layers liner DRAM DRAM Logic Copper TSV Underfill

16 Samsung DDR4 3D TSV

17 3D TSV Structure Comparison SK Hynix Samsung TSV Diam. 6µm 7µm TSV Pitch 40µm 67µm µbump Material Cu + Ni Ni µbump Diam. 16µm 33µm Underfill Micro-Bump Micro-Bump Underfill Underfill

18 Samsung DDR4 3D TSV Process Package Molding DRAM Four 4Gb DDR4 DRAM dies TSV-middle, Bottom-up filling Temporary bonding: TMAT process Equipment: SUSS Adhesive: Elastomer Carrier: Silicon Underfill DRAM Underfill DRAM Underfill DRAM 360µm Wafer-level non-conductive film (NCF) underfill Thermocompression bonding Underfill

19 Samsung TSV Process Nickel UBM TSV-middle 7µm Diam. 50µm Depth 7.25µm Nickel UBM Liner Copper TSV Silicon M2 (Cu) Silicon Copper TSV Liner M2 (Cu) Oxide Copper TSV M3 (Cu) M4 (Al) Nickel UBM

20 Samsung TSV Cost Estimation TSV Cost Breakdown TSV Etch assumption: DRIE equipment with ASP of $4M. Etch rate 10µm/min. Copper plating assumption: ECD equipment with ASP of $3.5M. Plating time: 50min TSV CMP 34% Estimated Cost $105 TSV Etching 28% CMP assumption: CMP equipment with ASP of $4M. Overburden: 3µm. Removal rate: 0.5µm/min Copper ECD 24% Liner Deposition 5% Barrier & Seed Layers 9%

21 TSV in MEMS and Sensors

22 Fairchild 6-Axis IMU Silicon Substrate TSV Silicon Substrate Fairchild FIS Axis IMU. I/O pads area removed TSV filled with poly Depth: 150µm Silicon Substrate Oxide Poly Silicon Substrate

23 mcube 3-Axis Accelerometer mcube 3rd generation Electrical connections in the MEMS structure are performed by TSV filled with tungsten. TSV filled with tungsten TSV Silicon MEMS Sensor (Si) W-TSV: Diam. 3µm Depth: 30µm IC Metal Layers Si Substrate Oxide

24 mcube 3-Axis Accelerometer mcube MC3571: 1.1 x 1.1 x 0.74 mm WLCSP 75% smaller than 2x2mm Developed by ASE Group

25 ams Ambient Light Sensor World s smallest ASL: 1.66x1.14x0.32mm Tungsten TSV-last 200µm depth 80µm diam. Silicon Substrate TSV Solder Bump TSV Silicon W

26 Apple iphone 6s Fingerprint Sensor Highest volume production TSV-middle iphone 6s released in September 2015 >50, inch wafers produced! Silicon Substrate Copper TSV 85 µm 12 µm

27 Conclusion 3D TSV is now in high volume production. Processes for memory stacking of Samsung and SK Hynix are close and share the same cost structure. TSV volume is still made with the sensors: CIS (Sony) MEMS Fingerprint (Apple)

28 Any Question? Thank You!