Numonyx Company Overview. Non-Volatile Memory Vision (R.Bez)

Transcription

1 Numonyx Company Overview Non-Volatile Memory Vision (R.Bez)

2 Announce the intent to form New Global Memory Company May 22 nd, Francisco Partners, Intel and ST announce intent to form a new global company focused on memory solutions Flash Memory Market Segment Share 2006 Revenue Base: $3.6B $M Samsung Intel + ST Spansion Toshiba Hynix Renesas Others Source: IDC, April 2007, Worldwide Flash Memory 2006 Vendor Shares, minus Intel NAND Page 2

3 Our Mission and Name Mission: Create compelling value for our customers by empowering our employees to create and deliver innovative memory system solutions. Our Mission is Reflected in Our Name: Numonyx Derived from the words mnemonic(s) and new, our mission is reflected in our name: Mnemonics (definition): A System for Improving Memory Page 3

4 Numonyx * Leadership Team NUMONYX Brian Harrison CEO NUMONYX Mario Licciardello COO Wireless Business Group Marco Dallabora CTO/Strategic Planning Ed Ed Doller SALES Rick Rick Hegberg Corporate Development Saul Saul Zales Embedded Business Group Glen Glen Hawk CFO/Finance Ken Ken Lever Human Resources Tom Tom Galvin Legal Kevin Fillo Fillo Q&R Q&R Flavia Redaelli Data Data Business Group Giuseppe Crisenza Manufacturing Alex Alex Kornhauser Research & Development Giulio Casagrande Infrastructure Mathieu Clerkx Corporate Integration Gordon McMillan Page 4

5 Optimized Solutions Across Segments Automotive Industrial Wired Comms PC & Peripherals Wireless Consumer Electronics Data Storage Focused Service & Support Innovative MCP & PoP Packaging Flash Software Solutions & Services Advanced Architectures Ecosystem Enabling Development Tools NAND Systems SLC/MLC NAND SLC/MLC NOR LP RAM PCM Page 5

6 Numonyx Global Footprint Product R&D Folsom, USA Agrate and Sicily, Italy Seoul, Korea Shanghai, China Headquarters Vaud, Switzerland Assembly/Test Muar, Malaysia Shanghai, China Cavite, Philippines Technology R&D Agrate, Italy Santa Clara, USA Wafer Fabrication Catania, Italy Kiryat Gat, Israel Ang Mo Kio, Singapore Wuxi, China Page 6

7 Agrate (Milan), Italy R&D R2 Technology Development Center Facilities 200mm 300mm R&D pilot line (end 2009) Research Labs & Activities Electrical labs. and Physical/chemical lab. Material and Device Research lab. of National Research Council Strong links with Universities and key European Research Centers Technologies: NOR / NAND / PCM Page 7

8 Portable Systems Drive Flash Market Consumer goods address billions of potential users, enabled by Solid State High Density Non-Volatile Memory Page 8

9 Mobile Phone Ingredients Card NAND Card NOR Code Code CPU Data CPU Data RAM RAM Shadow Working Working Static Data (Optional) Static Store & Download Execute in Place Page 9

10 NAND Specification Differentiation Same basic cell and array Optimization for specific application through design of periphery Source: Web-feet research Cellular Phones Solid State Drives Terabit Terabit Page 10

11 Memory Perspective Volume NAND Memory System NOR Year Page 11

12 Flash Cell Scaling Limits (2006) Page 12

13 Flash Cell Scaling Limits Year Node 90nm 65nm 45nm 32nm 22nm NOR NAND NOR Main scaling issues: Tunnel oxide thickness y-pitch L y-pitch Interpoly dielectric thickness W Cell gate length x-pitch Contact dimension/ isolation spacing Cell proximity (FG-FG parasitic coupling cross talk).. NAND W x-pitch L C FG CG C ONO FG C TUN C TUN Page 13

14 Innovations in Flash Technology System management techniques Charge placement algorithms Error management techniques High-k dielectrics and discretetrap memories Improved gate coupling ratio Reduced parasitic coupling Smoother morphology (easier integration) Oxide D Control Gate Floating Gate Nitride S Oxide D Control Gate High-K Nitride S New array and 3D architectures Extend the scaling law, avoiding some critical process steps Move the scaling constraints along the vertical dimension Page 14

15 Near-Term and Long-Term Alternatives FERAM PCM PMC RRAM Polymer FeRAM Word line Word line Polymer Layer Bit line Bit line Bit line Polymer Layer Word line CNT MRAM MOx-RRAM Polymer RRAM Molecular Explosion of New Memory Concepts New Storage Materials, New Storage Concepts Many Ideas, Varying Functionality/Cost, All Unproven Page 15

16 From Concept Top Electrode Resistor (Heater) Crystalline GST Bottom Electrode Page 16

17 to Integration Storage Element Memory Cell Memory Cell Array 128Mb PCM Chip Page 17

18 A Coordinated Research Effort Name Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 UVTECH CAMELS CHEMAPH VERSATILE EMMA PROTEM GOSSAMER Phase Change New Materials Flash Project Name CAMELS CHEMAPH EMMA VERSATILE PROTEM GOSSAMER Objectives Chalcogenide memory with multilevel storage Chemical vapor deposition of chalcogenide materials for phasechange memories Emerging materials for mass-storage architectures Vertically stacked memory cells based on heterojunctions made of hybrid organic/inorganic materials Probe storage-based Terabit memory Gigascale Oriented Solid State Flash Memory based on Charge Trap NAND Page 18

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