Holonomic Power Integrity Signoff Methodology of Mobile Baseband Processor. Steven Guo Deputy Director IC-Packaging Codesign Aug 5,2014
|
|
|
- Ezra Rodgers
- 5 years ago
- Views:
Transcription
1 Holonomic Power Integrity Signoff Methodology of Mobile Baseband Processor Steven Guo Deputy Director IC-Packaging Codesign Aug 5,2014
2 Spreadtrum and Product Introduction TD- SCDMA GSM WCDMA FDD-LTE TD-LTE GSM/EDGE/TD-SCDMA/WCDMA/TD-LTE/FDD-LTE Feature Phone /Smart Phone/Tablet / Datacard 提供一站式解决方案追求产品差异化缩短上市时间 Cadence Design Systems, Inc. All rights reserved.
3 Mobile Devices, Today & Tomorrow (I) Lifelike Graphics Larger Display Better User Experience Smarter Features High-Speed Connectivity 3G/4G/5G Biometrics/ Health/Medical Computing Everywhere Multi-Core Processing 3D Cadence Design Systems, Inc. All rights reserved.
4 Mobile Devices, Today & Tomorrow (II) Higher graphic resolution Heavier application HD: 1280x720 More density, higher band-width x32 x32 x32 Denisty:16GB/24GB/32GB 2K: 1920x1080 4K: 3840x2160 8K: 7680x4320 Technology Less Power, Always-on & Connected 18/12/8 inch 450/300/200mm Quad Core 28nm/16nm/10nm Thinner and Lighter (mm) Cadence Design Systems, Inc. All rights reserved.
5 Mobile DRAM will Exceed PC DRAM Performance Video/Graphic Computing Wireless Connectivity 25.6GBps (64 IO * 3.2Gbps) Cadence Design Systems, Inc. All rights reserved.
6 Lower Power Design and Power Trend Power /Temperature Leakage Current /Dynamic Power Dynamic Power Static Power Battery-Limit Thermal -Limit (Mobile Devices) Low Power Design Low Vth um 90nm 55nm 40nm 32nm 28nm 20nm 16nm 14nm 10nm 7nm 5G Cadence Design Systems, Inc. All rights reserved.
7 Power Signoff Challenges of Mobile Chips Less Design Margin VDD: 0.9V L * di /dt Lower Vt Larger Leakage Cadence Design Systems, Inc. All rights reserved.
8 Power Integrity Analysis Collaborating Across Team IC Power Analysis Designer Package Electrical Analysis Engineer System Electrical Analysis Engineer PI is not just IC Designer s Job Cadence Design Systems, Inc. All rights reserved.
9 System/IC-Centric PI Co-simulation PMIC/DC-DC PCB/Decap On-Package IR-Drop Source: Ball Sink: Bump Cadence Design Systems, Inc. All rights reserved. On-Chip IR-Drop Source : Bump Sink: Macros /Memory Standard Cell
10 Schematic representation of a Chip/System Co-simulation DC-DC Decap PCB PPM Static: Pure-R pin network Dynamic: RLCK pin network Ball RDL Layer... Mx Layer... Cells/ Poly/Circuit Switching Current Cadence Design Systems, Inc. All rights reserved. Cdie Bump Standard /Memory DPM DC: Die Current /DC AC: Die Current /PWL
11 Flipchip Baseband /Application Processor Case Ball: 492 Bumps: 1537 Power Net: VDDCORE 0.9V (TT) VDDARM 1.0V (TT) Ground Net: VSSCORE Cadence Design Systems, Inc. All rights reserved.
12 System-Centric DC IR-Drop simulation with DPM Cadence Design Systems, Inc. All rights reserved.
13 System-Centric DC IR-Drop simulation with DPM (cont.) On-Die Resistance network Cadence Design Systems, Inc. All rights reserved.
14 Package Bump Pad Current (without and with DPM) Substrate Bump Pin Current Substrate Bump Pin Current Equal Current without DPM Unequal/Distributed Current with DPM Cadence Design Systems, Inc. All rights reserved.
15 Package Bump Pad IR-Drop (without and with DPM) Equal Current without DPM Unequal/Distributed Current with DPM Cadence Design Systems, Inc. All rights reserved.
16 Package Current Density Distribution (without and with DPM) Current Density without DPM Current Density with DPM Cadence Design Systems, Inc. All rights reserved.
17 Chip-centric Static/Dynamic IR-Drop Simulation Cadence Design Systems, Inc. All rights reserved.
18 Link PPM Model with Voltus in IR-Drop Simulation R L C K MCP Net Grouped Total Distributed Cadence Design Systems, Inc. All rights reserved.
19 Chip VSSCORE Static IR-Drop (without and with PPM) Max: 0.016V Max: 0.021V Without PPM With PPM Cadence Design Systems, Inc. All rights reserved.
20 Chip VDDCORE Static IR-Drop (without and with PPM) Min: 0.881V Without PPM Min: 0.879V With PPM Cadence Design Systems, Inc. All rights reserved.
21 Summary The new Co-simulation methodology bridge cross domain (Package and IC) database interchange easily and effectively DPM model enables to predict more accurate current distribution on each bump pad, week design region and optimize the substrate design before chip tape Dynamic IR-Drop with PPM helps to find more real transient voltage and ripple noise, enable IC designer to optimize the on-chip Power Grid design Cadence Design Systems, Inc. All rights reserved.
22 Thank You
Physical Design Implementation for 3D IC Methodology and Tools. Dave Noice Vassilios Gerousis
I NVENTIVE Physical Design Implementation for 3D IC Methodology and Tools Dave Noice Vassilios Gerousis Outline 3D IC Physical components Modeling 3D IC Stack Configuration Physical Design With TSV Summary
Stacked IC Analysis Modeling for Power Noise Impact
Si2 Open3D Kick-off Meeting June 7, 2011 Stacked IC Analysis Modeling for Power Noise Impact Aveek Sarkar Vice President Product Engineering & Support Stacked IC Design Needs Implementation Electrical-,
Congestion-Aware Power Grid. and CMOS Decoupling Capacitors. Pingqiang Zhou Karthikk Sridharan Sachin S. Sapatnekar
Congestion-Aware Power Grid Optimization for 3D circuits Using MIM and CMOS Decoupling Capacitors Pingqiang Zhou Karthikk Sridharan Sachin S. Sapatnekar University of Minnesota 1 Outline Motivation A new
6 Channel EMI Filter Array with ESD Protection
6 Channel EMI Filter Array with ESD Protection Features Six channels of EMI filtering for data ports Pi-style EMI filters in a capacitor-resistor-capacitor (C-R-C) network Greater than 32dB attenuation
UMD 1423 UNITED MICRO DEVICE INC. Pi filter array with ESD protection. PRODUCT DESCRIPTION APPLICATIONS. This device has 20-bumps 4.
PRODUCT DESCRIPTION UMD1423 is a Pi filter array with TVS diodes for ESD protection. This device has six Pi filters integrated along with four channels of ESD protection. The Pi filters have values of
November 11, 2009 Chang Kim ( 김창식 )
Test Cost Challenges November 11, 2009 Chang Kim ( 김창식 ) 1 2 Where we are!!! Number of Die per wafer exponentially increasing!! Bigger Wafer Diameter 150mm 200mm 300mm 450mm 2000 2005 2010 2015 1985 1990
Xilinx SSI Technology Concept to Silicon Development Overview
Xilinx SSI Technology Concept to Silicon Development Overview Shankar Lakka Aug 27 th, 2012 Agenda Economic Drivers and Technical Challenges Xilinx SSI Technology, Power, Performance SSI Development Overview
Baseband IC Design Kits for Rapid System Realization
Baseband IC Design Kits for Rapid System Realization Lanbing Chen Cadence Design Systems Engineering Director John Rowland Spreadtrum Communications SVP of Hardware Engineering Agenda How to Speed Up IC
Electrical optimization and simulation of your PCB design
Electrical optimization and simulation of your PCB design Steve Gascoigne Senior Consultant at Mentor Graphics Zagreb, 10. lipnja 2015. Copyright CADCAM Group 2015 The Challenge of Validating a Design..
Constraint Driven I/O Planning and Placement for Chip-package Co-design
Constraint Driven I/O Planning and Placement for Chip-package Co-design Jinjun Xiong, Yiuchung Wong, Egino Sarto, Lei He University of California, Los Angeles Rio Design Automation, Inc. Agenda Motivation
Advanced Heterogeneous Solutions for System Integration
Advanced Heterogeneous Solutions for System Integration Kees Joosse Director Sales, Israel TSMC High-Growth Applications Drive Product and Technology Smartphone Cloud Data Center IoT CAGR 12 17 20% 24%
THERMAL GRADIENT AND IR DROP AWARE DESIGN FLOW FOR ANALOG-INTENSIVE ASICS
THERMAL GRADIENT AND IR DROP AWARE DESIGN FLOW FOR ANALOG-INTENSIVE ASICS Pacific MicroCHIP Corp. AIMS-CAT November, 2009 OUTLINE Motivation Thermal Gradient Impact Simulation Methodology Results Accurate
High performance HBM Known Good Stack Testing
High performance HBM Known Good Stack Testing FormFactor Teradyne Overview High Bandwidth Memory (HBM) Market and Technology Probing challenges Probe solution Power distribution challenges PDN design Simulation
Cadence Power Integrity Solutions For PCBs and IC Packages. May 2013
Cadence Power Integrity Solutions For PCBs and IC Packages May 2013 Simultaneous Switching Noise (SSN) A Power Integrity Issue Design with decaps intentionally removed to demonstrate how poor PI performance
Chip/Package/Board Interface Pathway Design and Optimization. Tom Whipple Product Engineering Architect November 2015
Chip/Package/Board Interface Pathway Design and Optimization Tom Whipple Product Engineering Architect November 2015 Chip/package/board interface pathway design and optimization PCB design with Allegro
SFC ChipClamp ΤΜ Flip Chip TVS Diode with T-Filter PRELIMINARY Features
Description The SFC2282-50 is a low pass T-filter with integrated TVS diodes. It is designed to provide bidirectional filtering of EMI/RFI signals and electrostatic discharge (ESD) protection in portable
Toshiba Case Study RF Module Shrink (TransferJet TM )
Toshiba Case Study RF Module Shrink (TransferJet TM ) These slides are an abridgement of two presentations given by Toshiba at the Zuken Innovation World (ZIW) conference held in Japan in 2012 and 2013.
TSV Test. Marc Loranger Director of Test Technologies Nov 11 th 2009, Seoul Korea
TSV Test Marc Loranger Director of Test Technologies Nov 11 th 2009, Seoul Korea # Agenda TSV Test Issues Reliability and Burn-in High Frequency Test at Probe (HFTAP) TSV Probing Issues DFT Opportunities
LCD and Camera EMI Filter Array with ESD Protection
LCD and Camera EMI Filter Array with ESD Protection Features Six and eight channels of EMI filtering with integrated ESD protection 0.4mm pitch, 15-bump, 2.360mm x 1.053mm footprint Chip Scale Package
Topological Routing to Maximize Routability for Package Substrate
Topological Routing to Maximize Routability for Package Substrate Speaker: Guoqiang Chen Authors: Shenghua Liu, Guoqiang Chen, Tom Tong Jing, Lei He, Tianpei Zhang, Robby Dutta, Xian-Long Hong Outline
Our Wireless Advantage
Americas Summit Our Wireless Advantage Wireless is The Foundation in Innovation, Development and Commercialization RAJESH PANKAJ, Senior Vice President, Engineering 1 The Fundamental Reason to Buy Smart
Typical Performance 1. Absolute Maximum Ratings
Device Features +5V/355mA at operating bias condition Gain = 27.0 db @ 1.9 GHz P1dB = 32.5 dbm @ 1.9GHz LTE 20M ACLR = 22dBm Output Power at -50dBc @ 1.9GHz Intergrated interstage matching Lead-free/Green/RoHS-compliant
NAN YA PCB CORPORATION COMPANY BRIEFING. March 2015 PAGE NYPCB, All Rights Reserved.
COMPANY BRIEFING March 2015 PAGE 1 Safe Harbor Notice Nan Ya PCB s statements of its current expectations are forward-looking statements subject to significant risks and uncertainties and actual results
Spreadtrum Communications, Inc. Investor Presentation 4Q12
Spreadtrum Communications, Inc. Technology for the Mobile World b Investor Presentation 4Q12 China United States Korea India Taiwan www.spreadtrum.com 1 Safe Harbor Statement This presentation contains
2 Channel Headset EMI Filter with ESD Protection
2 Channel Headset EMI Filter with ESD Protection Features Two channels of EMI filtering, one for a microphone and one for an earpiece speaker Pi-style EMI filters in a capacitor-resistor-capacitor (C-R-C)
TABLE OF CONTENTS 1.0 PURPOSE INTRODUCTION ESD CHECKS THROUGHOUT IC DESIGN FLOW... 2
TABLE OF CONTENTS 1.0 PURPOSE... 1 2.0 INTRODUCTION... 1 3.0 ESD CHECKS THROUGHOUT IC DESIGN FLOW... 2 3.1 PRODUCT DEFINITION PHASE... 3 3.2 CHIP ARCHITECTURE PHASE... 4 3.3 MODULE AND FULL IC DESIGN PHASE...
Chip-Package-Board Co-Design / Co-Verification Technology for DDR3 1.6G in Consumer Products
Chip-Package-Board Co-Design / Co-Verification Technology for DDR3 1.6G in Consumer Products Ji Zheng Director, Chip Package System Apache Design Solutions 2011 ASP-DAC Designer s Forum January 27, 2011
3D TECHNOLOGIES: SOME PERSPECTIVES FOR MEMORY INTERCONNECT AND CONTROLLER
3D TECHNOLOGIES: SOME PERSPECTIVES FOR MEMORY INTERCONNECT AND CONTROLLER CODES+ISSS: Special session on memory controllers Taipei, October 10 th 2011 Denis Dutoit, Fabien Clermidy, Pascal Vivet {denis.dutoit@cea.fr}
Next Generation Package on Package
Next Generation Package on Package Alternative PoP with Routable Substrate Interposer for Stacking Solution Steven(Jui Cheng) Lin, Siliconware Precision Industries Co., Ltd Outline High IO / Wide IO Market
Apache s Power Noise Simulation Technologies
Enabling Power Efficient i Designs Apache s Power Noise Simulation Technologies 1 Aveek Sarkar VP of Support Apache Design Inc, A wholly owned subsidiary of ANSYS Trends in Today s Electronic Designs Low-power
Physical Implementation
CS250 VLSI Systems Design Fall 2009 John Wawrzynek, Krste Asanovic, with John Lazzaro Physical Implementation Outline Standard cell back-end place and route tools make layout mostly automatic. However,
Advanced CSP & Turnkey Solutions. Fumio Ohyama Tera Probe, Inc.
Advanced CSP & Turnkey Solutions Fumio Ohyama Tera Probe, Inc. Tera Probe - Corporate Overview 1. Company : Tera Probe, Inc. 2. Founded : August, 2005 3. Capital : Approx. USD118.2 million (as of March
An Overview of Standard Cell Based Digital VLSI Design
An Overview of Standard Cell Based Digital VLSI Design With examples taken from the implementation of the 36-core AsAP1 chip and the 1000-core KiloCore chip Zhiyi Yu, Tinoosh Mohsenin, Aaron Stillmaker,
Samsung System LSI Business
Samsung System LSI Business NS (Stephen) Woo, Ph.D. President & GM of System LSI Samsung Electronics 0/32 Disclaimer The materials in this report include forward-looking statements which can generally
Samsung emcp. WLI DDP Package. Samsung Multi-Chip Packages can help reduce the time to market for handheld devices BROCHURE
Samsung emcp Samsung Multi-Chip Packages can help reduce the time to market for handheld devices WLI DDP Package Deliver innovative portable devices more quickly. Offer higher performance for a rapidly
IMM64M72SDDUD8AG (Die Revision B) 512MByte (64M x 72 Bit)
Product Specification Rev. 1.0 2015 IMM64M72SDDUD8AG (Die Revision B) 512MByte (64M x 72 Bit) 512MB SDRAM ECC Unbuffered DIMM RoHS Compliant Product Product Specification 1.0 1 IMM64M72SDDUD8AG Version:
1, 2, 4 and 8-Channel Very Low Capacitance ESD Protectors
1, 2, 4 and 8-Channel Very Low Capacitance ESD Protectors CM1210 Features 1,2,4 and 8 channels of ESD protection Very low loading capacitance (1.0pF typical) ±6 kv ESD protection per channel (IEC 61000-4-2
SN8200 LI+ DUAL BATTERY CONTROLLER
LI+ DUAL BATTERY CONTROLLER GENERAL DESCRIPTION The SN8200 is a highly integrated IC to serve as the control logic for a system with multiple power sources. It integrates a mini-charger s path power MOS
Optimization of Modern Memory
System Design, Verificationand and Optimization of Modern Memory Interfaces (DDR3) Santa Clara, Aug 23 rd 2011 Robert Myoung Sr. Application Engineer 1 Agenda Introduction ECAD Geometry Translation SI/PI
IMM64M64D1SOD16AG (Die Revision D) 512MByte (64M x 64 Bit)
Product Specification Rev. 2.0 2015 IMM64M64D1SOD16AG (Die Revision D) 512MByte (64M x 64 Bit) 512MB DDR Unbuffered SO-DIMM RoHS Compliant Product Product Specification 2.0 1 IMM64M64D1SOD16AG Version:
IMM128M72D1SOD8AG (Die Revision F) 1GByte (128M x 72 Bit)
Product Specification Rev. 1.0 2015 IMM128M72D1SOD8AG (Die Revision F) 1GByte (128M x 72 Bit) 1GB DDR Unbuffered SO-DIMM RoHS Compliant Product Product Specification 1.0 1 IMM128M72D1SOD8AG Version: Rev.
Fractional N PLL GHz
Fractional N PLL 8.5-11.3GHz PMCC_PLL12GFN IP MACRO Datasheet Rev 1 Process: 65nm CMOS DESCRIPTION PMCC_PLL12GFN is a macro-block designed for synthesizing the frequencies required for fiber optic transceivers
Advances in FHE Integration using FleXform-ADC. 2016FLEX Conference March 03, 2015
Advances in FHE Integration using FleXform-ADC 2016FLEX Conference March 03, 2015 What are Flexible Hybrid Electronics? Printed Electronics Low Cost, R2R, Large Format Flexible Hybrid System Combination
ECE 486/586. Computer Architecture. Lecture # 2
ECE 486/586 Computer Architecture Lecture # 2 Spring 2015 Portland State University Recap of Last Lecture Old view of computer architecture: Instruction Set Architecture (ISA) design Real computer architecture:
EM8D-100L EMI FILTER/TVS ARRAY DESCRIPTION DFN-16 PACKAGE FEATURES APPLICATIONS MECHANICAL CHARACTERISTICS CIRCUIT DIAGRAM & PIN CONFIGURATION
EMI FILTER/TVS ARRAY DESCRIPTION The is a DFN-16, 8 line low pass filter array with integrated TVS diodes. The is designed to suppress unwanted EMI/RFI signals and provide ESD protection for high-speed
IMEC CORE CMOS P. MARCHAL
APPLICATIONS & 3D TECHNOLOGY IMEC CORE CMOS P. MARCHAL OUTLINE What is important to spec 3D technology How to set specs for the different applications - Mobile consumer - Memory - High performance Conclusions
IMM128M64D1DVD8AG (Die Revision F) 1GByte (128M x 64 Bit)
Product Specification Rev. 1.0 2015 IMM128M64D1DVD8AG (Die Revision F) 1GByte (128M x 64 Bit) 1GB DDR VLP Unbuffered DIMM RoHS Compliant Product Product Specification 1.0 1 IMM128M64D1DVD8AG Version: Rev.
Advanced SI Analysis Layout Driven Assembly. Tom MacDonald RF/SI Applications Engineer II
Advanced SI Analysis Layout Driven Assembly 1 Tom MacDonald RF/SI Applications Engineer II Abstract As the voracious appetite for technology continually grows, so too does the need for fast turn around
Lab. Course Goals. Topics. What is VLSI design? What is an integrated circuit? VLSI Design Cycle. VLSI Design Automation
Course Goals Lab Understand key components in VLSI designs Become familiar with design tools (Cadence) Understand design flows Understand behavioral, structural, and physical specifications Be able to
Packaging of Selected Advanced Logic in 2x and 1x nodes. 1 I TechInsights
Packaging of Selected Advanced Logic in 2x and 1x nodes 1 I TechInsights Logic: LOGIC: Packaging of Selected Advanced Devices in 2x and 1x nodes Xilinx-Kintex 7XC 7 XC7K325T TSMC 28 nm HPL HKMG planar
IMM64M72D1SCS8AG (Die Revision D) 512MByte (64M x 72 Bit)
Product Specification Rev. 1.0 2015 IMM64M72D1SCS8AG (Die Revision D) 512MByte (64M x 72 Bit) RoHS Compliant Product Product Specification 1.0 1 IMM64M72D1SCS8AG Version: Rev. 1.0, MAY 2015 1.0 - Initial
Model Connection Protocol extensions for Mixed Signal SiP
Model Connection Protocol extensions for Mixed Signal SiP Taranjit Kukal (kukal@cadence.com) Dr. Wenliang Dai (wldai@cadence.com) Brad Brim (bradb@sigrity.com) Presented by: Yukio Masuko Cadence Note:
GRF dbm Power-LNA GHz. Features. Applications. Preliminary. Product Description. Functional Block Diagram
+30.8 dbm Power-LNA 0.01 3.8 GHz Package: 3.0 x 3.0 mm QFN-16 Product Description Features 1.6 3.0 GHz with single match EVB NF: 0.82 db at 2.5 GHz Gain: 15.5 db at 2.5 GHz OP1dB: +30.8 dbm at Vdd: 10.0
IMME256M64D2SOD8AG (Die Revision E) 2GByte (256M x 64 Bit)
Product Specification Rev. 1.0 2015 IMME256M64D2SOD8AG (Die Revision E) 2GByte (256M x 64 Bit) 2GB DDR2 Unbuffered SO-DIMM By ECC DRAM RoHS Compliant Product Product Specification 1.0 1 IMME256M64D2SOD8AG
GRF dbm Power-LNA GHz. Features. Applications. Preliminary. Product Description. Functional Block Diagram
+28.5 dbm Power-LNA 0.01 6.0 GHz Package: 3.0 x 3.0 mm QFN-16 Product Description Features 1.7 to 3.8 GHz (Single match) Gain: 17.5 db at 2.5 GHz NF: 0.70 db at 2.5 GHz OP1dB: +28.5 dbm at Vdd: 8.0 volts
IMME256M64D2DUD8AG (Die Revision E) 2GByte (256M x 64 Bit)
Product Specification Rev. 1.0 2015 IMME256M64D2DUD8AG (Die Revision E) 2GByte (256M x 64 Bit) 2GB DDR2 Unbuffered DIMM By ECC DRAM RoHS Compliant Product Product Specification 1.0 1 IMME256M64D2DUD8AG
Recent IoT/Automotive device Trends and testing challenges Presented To: SiP Conference China 2018 Presented By: Kotaro HASEGAWA
Recent IoT/Automotive device Trends and testing challenges Presented To: SiP Conference China 2018 Presented By: Kotaro HASEGAWA 2018/10/19 All Rights Reserved - ADVANTEST CORPORATION 1 IoT Market Trend
"High Frequency Ceramic Solutions"
Page 1 of 5 This filter is associated with Intel Reference Desing Platform: IRE220 General Specifications Part Number 5697CR45A0360 Operating Passband Freq. 5490-5850 MHz Top View Insertion loss (5490-5670MHz)
IMM64M64D1DVS8AG (Die Revision D) 512MByte (64M x 64 Bit)
Product Specification Rev. 1.0 2015 IMM64M64D1DVS8AG (Die Revision D) 512MByte (64M x 64 Bit) 512MB DDR VLP Unbuffered DIMM RoHS Compliant Product Product Specification 1.0 1 IMM64M64D1DVS8AG Version:
ZL40218 Precision 1:8 LVDS Fanout Buffer
Precision 1:8 LVDS Fanout Buffer Data Sheet Features Inputs/Outputs Accepts differential or single-ended input LVPECL, LVDS, CML, HCSL, LVCMOS Eight precision LVDS outputs Operating frequency up to 750
Microelettronica. J. M. Rabaey, "Digital integrated circuits: a design perspective" EE141 Microelettronica
Microelettronica J. M. Rabaey, "Digital integrated circuits: a design perspective" Introduction Why is designing digital ICs different today than it was before? Will it change in future? The First Computer
EnerChip CBC012. Rechargeable Solid State Energy Storage: 12µAh, 3.8V
EnerChip CBC012 Rechargeable Solid State Energy Storage: 12µAh, 3.8V Features All Solid State Construction SMT Package and Process Lead-Free Reflow Tolerant Thousands of Recharge Cycles Low Self-Discharge
GRF dbm Power-LNA GHz. Features. Applications. Preliminary. Product Description. Functional Block Diagram
+30.5 dbm Power-LNA 0.01 6.0 GHz Package: 3.0 x 3.0 mm QFN-16 Product Description Features Bandwidth: 1.7 2.7 GHz (Single Match) Bandwidth: 3.0 4.0 GHz (Single Match) Bandwidth: 5.1-5.9 GHz (Single Match)
Area Array Probe Card Interposer. Raphael Robertazzi IBM Research 6/4/01. 6/4/01 IBM RESEARCH Page [1]
![Area Array Probe Card Interposer. Raphael Robertazzi IBM Research 6/4/01. 6/4/01 IBM RESEARCH Page [1]](/thumbs/78/78371092.jpg "Area Array Probe Card Interposer. Raphael Robertazzi IBM Research 6/4/01. 6/4/01 IBM RESEARCH Page [1]")
Area Array Probe Card Interposer Raphael Robertazzi IBM Research 6/4/01 6/4/01 IBM RESEARCH Page [1] Motivation: Outline Probe Cards for Testing Complex ICs in the Developmental Stage. Hand Wired Space
HT1628 RAM Mapping LCD Driver
RAM Mapping 116 2 LCD Driver Features Logic voltage 2.4V~5.5V LCD operating voltage (VLCD) 2.4V~5.5V LCD display 2 commons, 116 segments Support a maximum of 58 4 bit Display RAM Duty Static, 1/2; Bias
DIO5151B 700mA/1A Buck/Boost Charge Pump LED Driver
Rev 0.1 Features Output Current : DIO5151BED8: 700mA DIO5151BCD10: 1A Up to 90% Efficiency in Torch Mode Adjustable FLASH Mode Current 1 and 2 Automatic Modes for High Efficiency Input Voltage Range: 3V
Power-Supply-Network Design in 3D Integrated Systems
Power-Supply-Network Design in 3D Integrated Systems Michael B. Healy and Sung Kyu Lim School of Electrical and Computer Engineering, Georgia Institute of Technology 777 Atlantic Dr. NW, Atlanta, GA 3332
Power Considerations in High Performance FPGAs. Abu Eghan, Principal Engineer Xilinx Inc.
Power Considerations in High Performance FPGAs Abu Eghan, Principal Engineer Xilinx Inc. Agenda Introduction Trends and opportunities The programmable factor 4 focus areas for power consideration Silicon
Headset/Speaker EMI Filter with ESD Protection CM1416/D. Features. Product Description. Applications. ±30kV ESD protection on each channel per
Headset/Speaker EMI Filter with ESD Protection CM1416 Features Functionally and pin compatible with the CSPEMI201A and CM1411 OptiGuard coated for improved reliability at assembly Two channels of EMI filtering
INPAQ Global RF/Component Solutions
TVL SC7 4 AC Specification Product Name Series Part No Package Size Transient Voltage Suppressor TVS Series TVL SC7 4 AC SC7-6L TVL SC7 4 AC Engineering Specification 1. Scope TVL SC7 4 AC s are TVS arrays
EClamp2410P. ESD Protection Device for T-Flash/MicroSD Interfaces PRELIMINARY. PROTECTION PRODUCTS - EMIClamp TM Description.
- EMIClamp TM Description The EClamp TM 240P is a combination EMI fi lter and line termination device with integrated TVS diodes for use on Multimedia Card interfaces. This state-of-the-art device utilizes
TVW MSOP 04 AD0 Engineering Specification
TVW MSOP 4 AD 1 Scope TVW MSOP 4 AD s are TVS arrays designed to protect power/control lines and high-speed signal lines from overvoltage hazard of Electrostatic Discharge (ESD), Electrical Fast Transients
Programmable CMOS LVDS Transmitter/Receiver
SPECIFICATION 1. FEATURES Technology TSMC 0.13um CMOS 3.3 V analog power supply 1.2 V digital power supply 1.2V CMOS input and output logic signals 8-step (3-bit) adjustable transmitter output current
Improved Circuit Reliability/Robustness. Carey Robertson Product Marketing Director Mentor Graphics Corporation
Improved Circuit Reliability/Robustness Carey Robertson Product Marketing Director Mentor Graphics Corporation Reliability Requirements are Growing in all Market Segments Transportation Mobile / Wireless
MIC2782. General Description. Features. Applications. Typical Application. Dual-Input Push Button Reset IC with Immediate and Delayed Outputs
Dual-Input Push Button Reset IC with Immediate and Delayed Outputs General Description The is a two input, two output push button reset IC. It will generate a reset pulse for a factory programmed reset
More Course Information
More Course Information Labs and lectures are both important Labs: cover more on hands-on design/tool/flow issues Lectures: important in terms of basic concepts and fundamentals Do well in labs Do well
A 1.5GHz Third Generation Itanium Processor
A 1.5GHz Third Generation Itanium Processor Jason Stinson, Stefan Rusu Intel Corporation, Santa Clara, CA 1 Outline Processor highlights Process technology details Itanium processor evolution Block diagram
Pilot Scout 2.1 Datasheet V12.12
Pilot Scout 2.1 Datasheet V12.12 Contents Contents 1 What's New... 2 2 Overview... 3 2.1 Brief Introduction... 3 2.2 System Architecture... 3 3 Performance & Feature... 5 3.1 Test Services... 5 3.2 Features...
Thermal Sign-Off Analysis for Advanced 3D IC Integration
Sign-Off Analysis for Advanced 3D IC Integration Dr. John Parry, CEng. Senior Industry Manager Mechanical Analysis Division May 27, 2018 Topics n Acknowledgements n Challenges n Issues with Existing Solutions
UNIVERSITY OF WATERLOO
UNIVERSITY OF WATERLOO UW ASIC DESIGN TEAM: Cadence Tutorial Description: Part I: Layout & DRC of a CMOS inverter. Part II: Extraction & LVS of a CMOS inverter. Part III: Post-Layout Simulation. The Cadence
Five Emerging DRAM Interfaces You Should Know for Your Next Design
Five Emerging DRAM Interfaces You Should Know for Your Next Design By Gopal Raghavan, Cadence Design Systems Producing DRAM chips in commodity volumes and prices to meet the demands of the mobile market
ELE 455/555 Computer System Engineering. Section 1 Review and Foundations Class 3 Technology
ELE 455/555 Computer System Engineering Section 1 Review and Foundations Class 3 MOSFETs MOSFET Terminology Metal Oxide Semiconductor Field Effect Transistor 4 terminal device Source, Gate, Drain, Body
ELECTRICAL SPECIFICATIONS** Frequency. Power Handling. Directivity. .064±.013 [1.64±0.33] Pin ±.004 [3.05±0.10] Pin 3
![ELECTRICAL SPECIFICATIONS** Frequency. Power Handling. Directivity. .064±.013 [1.64±0.33] Pin ±.004 [3.05±0.10] Pin 3](/thumbs/89/100344529.jpg "ELECTRICAL SPECIFICATIONS** Frequency. Power Handling. Directivity. .064±.013 [1.64±0.33] Pin ±.004 [3.05±0.10] Pin 3")
Pico Xinger 20dB Directional Coupler Description The 1P620 Pico Xinger is a low profile, miniature 20dB directional coupler in an easy to use surface mount package designed for MMDS and WLAN applications.
GRF2083. Preliminary. Ultra-LNA with Shutdown Tuning Range: 3.0 to 6.0 GHz. Product Description. Features. Applications
Product Description Features Reference: 5V/70 ma/3.6 GHz Gain: 17.8 db Eval Board NF: 0.65 db OP1dB: 19.5 dbm OIP3: 36.5 dbm High Isolation Shut Down State Flexible Bias Voltage is a broadband, linear,
2 AA Cell to 3.3V USB On-The-Go Devices White LED Drivers Handheld Devices. The HM3200B is available in the 6-pin SOT23-6.
Low Noise, Regulated Charge Pump DC/DC Converter Features Fixed 3.3V ± 4% Output VIN Range: 1.8V to 5V Output Current: 100mA Constant Frequency Operation at All Loads Low Noise Constant Frequency (1.2MHz)
SYSTEM INTEGRATION & PORTABLE/WEARABLE/IOT DEVICES
AGENDA RECON PACKAGING TECHNOLOGY FOR SYSTEM INTEGRATION & PORTABLE/WEARABLE/IOT DEVICES Edward Law Senior Director Package Engineering, Operations and Central Engineering 1 OUTLINE Market dynamics Connectivity
RClamp TM 0504M RailClamp Low Capacitance TVS Diode Array PRELIMINARY Features
Description RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive components which are connected
INTEGRATED CIRCUITS V3.1. Version Originator Date FZB Comments
INTEGRATED CIRCUITS DATA SHEET Change history: V3. Version Originator Date FZB-2-23- Comments V2. P.Oelhafen 2 Jul. 33 RFS update V2. P.Oelhafen 4 Aug. 44 RFS update fig4 correction V2.2 P.Oelhafen 9 Aug.
Stacked Silicon Interconnect Technology (SSIT)
Stacked Silicon Interconnect Technology (SSIT) Suresh Ramalingam Xilinx Inc. MEPTEC, January 12, 2011 Agenda Background and Motivation Stacked Silicon Interconnect Technology Summary Background and Motivation
Ultra Fine Pitch RDL Development in Multi-layer ewlb (embedded Wafer Level BGA) Packages
Ultra Fine Pitch RDL Development in Multi-layer ewlb (embedded Wafer Level BGA) Packages Won Kyoung Choi*, Duk Ju Na*, Kyaw Oo Aung*, Andy Yong*, Jaesik Lee**, Urmi Ray**, Riko Radojcic**, Bernard Adams***
A Review Paper on Reconfigurable Techniques to Improve Critical Parameters of SRAM
IJSRD - International Journal for Scientific Research & Development Vol. 4, Issue 09, 2016 ISSN (online): 2321-0613 A Review Paper on Reconfigurable Techniques to Improve Critical Parameters of SRAM Yogit
Organization Row Address Column Address Bank Address Auto Precharge 128Mx8 (1GB) based module A0-A13 A0-A9 BA0-BA2 A10
GENERAL DESCRIPTION The Gigaram is ECC Registered Dual-Die DIMM with 1.25inch (30.00mm) height based on DDR2 technology. DIMMs are available as ECC modules in 256Mx72 (2GByte) organization and density,
I/O Expansion Module Installation & Reference
Overview The In-Sight vision sensor supports up to ten discrete inputs and ten discrete outputs. Two inputs and two outputs are built-in to the In-Sight processor. The remaining eight inputs and outputs
FX5767 FX GHz DPDT Switch Module. Features. Description. Block Diagram. Application. Broadband support GHz. Compatible with 3G/LTE
FX5767 0.7-3.0GHz DPDT Switch Module Description The FX5767 is a DPDT (Double-pole double-throw) switch module, designed for multimode broadband 3G/LTE cellular applications, supporting from 700MHz to
Preliminary Product Overview
Preliminary Product Overview Features 1.0 A per channel / 3.0 A Total Current Maximum Voltage (AC or DC): +150 V Low On-State Resistance < 1.0 Ω 10 GΩ Input to Output Isolation < 10us Switching Time High
Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier
DATASHEET ENCOUNTER LIBRARY CHARACTERIZER ENCOUNTER LIBRARY CHARACTERIZER
DATASHEET ENCOUNTER LIBRARY CHARACTERIZER Power and process variation concerns are growing for digital IC designers, who need advanced modeling formats to support their cutting-edge low-power digital design
Jae Wook Lee. SIC R&D Lab. LG Electronics
Jae Wook Lee SIC R&D Lab. LG Electronics Contents Introduction Why power validation on mobile application processor? Then, what to validate? Who is in charge of validation? Power Validation Components
Digital IO PAD Overview and Calibration Scheme
Digital IO PAD Overview and Calibration Scheme HyunJin Kim School of Electronics and Electrical Engineering Dankook University Contents 1. Introduction 2. IO Structure 3. ZQ Calibration Scheme 4. Conclusion
Wireless Market Update
Wireless Market Update Wireless Trends and the Impact on Test Nov 2012 2012 LitePoint Corp. 2012 LitePoint, A Teradyne Company. All rights reserved. Where is Wireless Going? 2012 LitePoint Corp. 7 Wi-Fi