Memory Arrays. Array Architecture. Chapter 16 Memory Circuits and Chapter 12 Array Subsystems from CMOS VLSI Design by Weste and Harris, 4 th Edition
|
|
- Benjamin Morrison
- 5 years ago
- Views:
Transcription
1 Chapter 6 Memory Circuits and Chapter rray Subsystems from CMOS VLSI Design by Weste and Harris, th Edition E E 80 Introduction to nalog and Digital VLSI Paul M. Furth New Mexico State University Static RM (SRM) Mask ROM Read/Write Memory (RM) (Volatile) Memory rrays Memory rrays Random ccess Memory Serial ccess Memory Content ddressable Memory (CM) Dynamic RM (DRM) Programmable ROM (PROM) Read Only Memory (ROM) (Nonvolatile) Erasable Programmable ROM (EPROM) Serial In Parallel Out (SIPO) Shift Registers Parallel In Serial Out (PISO) Electrically Erasable Programmable ROM (EEPROM) Queues Flash ROM First In First Out (FIFO) Last In First Out (LIFO) Random ccess Memory (RM) any can be accessed at any time row/ line selected first entire row of array selected column address chooses particular memory location Read or write operation on one at a time. External inputs rray rchitecture n s of m s each If n >> m, fold by k into fewer rows of more columns Good regularity easy to design Very high density if good cells are used 3
2 DRM (Dynamic RM) Cell One transistor, one capacitor. Most dense RM Requires refresh every ms or else voltage on C m will leak away (through off transistor). Refresh of stored or 0 occurs during a read operation, a whole row at a time. DRM using trench capacitor with shared line contact (to reduce column capacitance) 5 6 Three layers of poly required Poly for lines Poly/poly3 for capacitance 6T SRM Cell Cell size accounts for most of array size _b Reduce cell size at expense of complexity 6T SRM Cell Used in most commercial chips Data stored in crosscoupled inverters Read: Precharge, _b to V DD Raise line OR _b driven to 0 Write: Drive data onto, _b Raise line One side has a strong 0 written to it 7 8
3 SRM Read Precharge both lines high Turn on line One of the lines will be pulled down by cell Ex: = 0, _b = discharges, _b stays high But bumps up slightly Read stability must not flip N ~ x strength of N N, N weak _b P P N N _b N N3 _b _b time (ps) 9 SRM Write Drive one line high, the other low Turnon line Bitlines overpower cell with new value Ex: = 0, _b =, =, _b = 0 Force _b low, then rises high Writability Must overpower feedback inverter N >> P P, P weaker still N _b _b P N time (ps) P N3 _b _b N 0 SRM Sizing High lines must not overpower inverters during reads But low lines must write new value into cell Substrate contacts often placed outside cell _b Read _q Bitline Conditioning More Cells SRM Cell Very Strong Transistors Write _vf _b_vf H H med weak 8 strong med _b 8 _q, _b out_b_vr out_vr out_b, out 3
4 SRM Layout Cell size is critical: 6 x 5 (cells in industry much smaller!) Tile cells sharing V DD, GND, wires and line contacts Every 6 cells, tie straps, add substrate/well contacts POLY WORD (horizontal) M VDD (horizontal) M BIT/BIT_B, GND (vertical) M3 VDD, WORD (for strapping) M GND (for strapping) 0 ddress Decoders n: n decoder consists of n n-input ND gates One needed for each row of memory, driving x m nmos transistors, since m s in each row. Build ND from NND or NOR gates VDD GND BIT BIT_B GND 0 Static CMOS ND WORD Cell boundary 3 Large Decoders For n > 3, NND becomes slow Break large gates into smaller gates For n >, NOR becomes slow Z B C D B C D B C D 3 0 -input NND -input NOR Row line driver uses V DDP =.5V to turn on pass transistors in SRM cell better If row line driver is driven by -V inverter When output of -V inverter high Row driver NFET ON Row driver PFET not turned all the way OFF Drives NMOS Pass Transistors 5 6
5 Level Shifter Column Circuitry DEC signal goes from 0V to V Inverter powered using V If DEC = V M ON and M OFF M ON and M3 OFF row line =.5 V Motivation for sense amplifiers: large C col Circuitry required for each column Bitline conditioning Sense amplifiers Column multiplexing 7 8 Bit (column) line capacitance makes sensing (reading) SRM slow. Suppose line is 00 mx0. m ssume diffusion contact C n+/p- ~ 0.5 ff C m-to-sub = 0.03 ff/ m x ff/ m x P = 7fF C col = (number of lines/ shared) x C n+/p- + C m-to-sub For 56 lines, C col = 9 ff Sensing basics One (row) line is selected small SRM cell element in each column ( line) drives the large line capacitance Results in small change, e.g., V = 50 mv 9 0 5
6 Bitline Conditioning Precharge lines high before reads Equalize lines to minimize voltage difference when using sense amplifiers _b Very strong transistors to drive large -line capacitance. Clocked Sense mp Clocked sense amp saves power Requires sense_clk after enough line swing (delayed ) Isolation transistors cut off large line capacitance _b sense_clk 6 sense 6 / 8 / 6 sense_b isolation transistors regenerative feedback with L = L min Column Multiplexing Recall that array may be folded for good aspect ratio (more columns than rows) For example, k x 6s = 3ks gets folded into 8 rows x 56 columns = 3ks Must select 6 output s from the 56 columns Requires sixteen 6: column multiplexers Same circuit as in previous slide In+ =, In- = _b Out+ = sense, Out- = sense_b clock = sense_clk 3 9: SRM 6
7 Single Pass- Gate Mux SRM Block Diagram [5:0] 6 x 6 SRM rray Decoder and single pass transistor L Inverter means Low switching point (V SP ) made with large NMOS 5 symbol rsel[3:0] din write csel[3:0] rs[3:0] RowSel Buffers Input Gating ColSel Buffers rs[3:0] sclk [5:0] wdat0 wdat cs[3:0] cs[3:0] [5:0] [5:0] Pre-Charge Sense-mp [5:0] sens[5:0] Write Logic Column MUX col[5:0] Column Decoder sens[5:0] out out Output Buffer dout 6 ROM (Read-only memory) Most dense One transistor per memory Not writable after manufacturing (or burning ) 7 8 7
Introduction to CMOS VLSI Design Lecture 13: SRAM
Introduction to CMOS VLSI Design Lecture 13: SRAM David Harris Harvey Mudd College Spring 2004 1 Outline Memory Arrays SRAM Architecture SRAM Cell Decoders Column Circuitry Multiple Ports Serial Access
More informationIntroduction to SRAM. Jasur Hanbaba
Introduction to SRAM Jasur Hanbaba Outline Memory Arrays SRAM Architecture SRAM Cell Decoders Column Circuitry Non-volatile Memory Manufacturing Flow Memory Arrays Memory Arrays Random Access Memory Serial
More informationLecture 13: SRAM. Slides courtesy of Deming Chen. Slides based on the initial set from David Harris. 4th Ed.
Lecture 13: SRAM Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline Memory Arrays SRAM Architecture SRAM Cell Decoders Column Circuitry Multiple Ports
More informationSRAM. Introduction. Digital IC
SRAM Introduction Outline Memory Arrays SRAM Architecture SRAM Cell Decoders Column Circuitry Multiple Ports Serial Access Memories Memory Arrays Memory Arrays Random Access Memory Serial Access Memory
More informationCENG 4480 L09 Memory 2
CENG 4480 L09 Memory 2 Bei Yu Reference: Chapter 11 Memories CMOS VLSI Design A Circuits and Systems Perspective by H.E.Weste and D.M.Harris 1 v.s. CENG3420 CENG3420: architecture perspective memory coherent
More informationMemory. Outline. ECEN454 Digital Integrated Circuit Design. Memory Arrays. SRAM Architecture DRAM. Serial Access Memories ROM
ECEN454 Digital Integrated Circuit Design Memory ECEN 454 Memory Arrays SRAM Architecture SRAM Cell Decoders Column Circuitry Multiple Ports DRAM Outline Serial Access Memories ROM ECEN 454 12.2 1 Memory
More informationDigital Integrated Circuits Lecture 13: SRAM
Digital Integrated Circuits Lecture 13: SRAM Chih-Wei Liu VLSI Signal Processing LAB National Chiao Tung University cwliu@twins.ee.nctu.edu.tw DIC-Lec13 cwliu@twins.ee.nctu.edu.tw 1 Outline Memory Arrays
More informationLecture 11 SRAM Zhuo Feng. Z. Feng MTU EE4800 CMOS Digital IC Design & Analysis 2010
EE4800 CMOS Digital IC Design & Analysis Lecture 11 SRAM Zhuo Feng 11.1 Memory Arrays SRAM Architecture SRAM Cell Decoders Column Circuitryit Multiple Ports Outline Serial Access Memories 11.2 Memory Arrays
More information+1 (479)
Memory Courtesy of Dr. Daehyun Lim@WSU, Dr. Harris@HMC, Dr. Shmuel Wimer@BIU and Dr. Choi@PSU http://csce.uark.edu +1 (479) 575-6043 yrpeng@uark.edu Memory Arrays Memory Arrays Random Access Memory Serial
More informationESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 26: November 9, 2018 Memory Overview Dynamic OR4! Precharge time?! Driving input " With R 0 /2 inverter! Driving inverter
More informationSemiconductor Memory Classification
ESE37: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: November, 7 Memory Overview Today! Memory " Classification " Architecture " Memory core " Periphery (time permitting)!
More information! Memory. " RAM Memory. " Serial Access Memories. ! Cell size accounts for most of memory array size. ! 6T SRAM Cell. " Used in most commercial chips
ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec : April 5, 8 Memory: Periphery circuits Today! Memory " RAM Memory " Architecture " Memory core " SRAM " DRAM " Periphery " Serial Access Memories
More informationCHAPTER 8. Array Subsystems. VLSI Design. Chih-Cheng Hsieh
CHAPTER 8 Array Subsystems Outline 2 1. SRAM 2. DRAM 3. Read-Only Memory (ROM) 4. Serial Access Memory 5. Content-Addressable Memory 6. Programmable Logic Array Memory Arrays 3 Memory Arrays Random Access
More information! Memory Overview. ! ROM Memories. ! RAM Memory " SRAM " DRAM. ! This is done because we can build. " large, slow memories OR
ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec 2: April 5, 26 Memory Overview, Memory Core Cells Lecture Outline! Memory Overview! ROM Memories! RAM Memory " SRAM " DRAM 2 Memory Overview
More informationSemiconductor Memory Classification. Today. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. CPU Memory Hierarchy.
ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec : April 4, 7 Memory Overview, Memory Core Cells Today! Memory " Classification " ROM Memories " RAM Memory " Architecture " Memory core " SRAM
More informationVery Large Scale Integration (VLSI)
Very Large Scale Integration (VLSI) Lecture 8 Dr. Ahmed H. Madian ah_madian@hotmail.com Content Array Subsystems Introduction General memory array architecture SRAM (6-T cell) CAM Read only memory Introduction
More informationIntroduction to CMOS VLSI Design. Semiconductor Memory Harris and Weste, Chapter October 2018
Introduction to CMOS VLSI Design Semiconductor Memory Harris and Weste, Chapter 12 25 October 2018 J. J. Nahas and P. M. Kogge Modified from slides by Jay Brockman 2008 [Including slides from Harris &
More informationMEMORIES. Memories. EEC 116, B. Baas 3
MEMORIES Memories VLSI memories can be classified as belonging to one of two major categories: Individual registers, single bit, or foreground memories Clocked: Transparent latches and Flip-flops Unclocked:
More informationBased on slides/material by. Topic 7-4. Memory and Array Circuits. Outline. Semiconductor Memory Classification
Based on slides/material by Topic 7 Memory and Array Circuits K. Masselos http://cas.ee.ic.ac.uk/~kostas J. Rabaey http://bwrc.eecs.berkeley.edu/classes/icbook/instructors.html Digital Integrated Circuits:
More informationCHAPTER 12 ARRAY SUBSYSTEMS [ ] MANJARI S. KULKARNI
CHAPTER 2 ARRAY SUBSYSTEMS [2.4-2.9] MANJARI S. KULKARNI OVERVIEW Array classification Non volatile memory Design and Layout Read-Only Memory (ROM) Pseudo nmos and NAND ROMs Programmable ROMS PROMS, EPROMs,
More informationLecture 11: MOS Memory
Lecture 11: MOS Memory MAH, AEN EE271 Lecture 11 1 Memory Reading W&E 8.3.1-8.3.2 - Memory Design Introduction Memories are one of the most useful VLSI building blocks. One reason for their utility is
More informationIntroduction to Semiconductor Memory Dr. Lynn Fuller Webpage:
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Introduction to Semiconductor Memory Webpage: http://people.rit.edu/lffeee 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035
More informationMemory Design I. Array-Structured Memory Architecture. Professor Chris H. Kim. Dept. of ECE.
Memory Design I Professor Chris H. Kim University of Minnesota Dept. of ECE chriskim@ece.umn.edu Array-Structured Memory Architecture 2 1 Semiconductor Memory Classification Read-Write Wi Memory Non-Volatile
More informationCENG 4480 L09 Memory 3
CENG 4480 L09 Memory 3 Bei Yu Chapter 11 Memories Reference: CMOS VLSI Design A Circuits and Systems Perspective by H.E.Weste and D.M.Harris 1 Memory Arrays Memory Arrays Random Access Memory Serial Access
More informationMemory Classification revisited. Slide 3
Slide 1 Topics q Introduction to memory q SRAM : Basic memory element q Operations and modes of failure q Cell optimization q SRAM peripherals q Memory architecture and folding Slide 2 Memory Classification
More informationUnit 7: Memory. Dynamic shift register: Circuit diagram: Refer to unit 4(ch 6.5.4)
Unit 7: Memory Objectives: At the end of this unit we will be able to understand System timing consideration Storage / Memory Elements dynamic shift register 1T and 3T dynamic memory 4T dynamic and 6T
More information! Serial Access Memories. ! Multiported SRAM ! 5T SRAM ! DRAM. ! Shift registers store and delay data. ! Simple design: cascade of registers
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 28: November 16, 2016 RAM Core Pt 2 Outline! Serial Access Memories! Multiported SRAM! 5T SRAM! DRAM Penn ESE 370 Fall 2016
More informationCMPEN 411 VLSI Digital Circuits Spring Lecture 22: Memery, ROM
CMPEN 411 VLSI Digital Circuits Spring 2011 Lecture 22: Memery, ROM [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] Sp11 CMPEN 411 L22 S.1
More informationIntegrated Circuits & Systems
Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 23-1 guntzel@inf.ufsc.br Semiconductor Memory Classification
More informationMagnetic core memory (1951) cm 2 ( bit)
Magnetic core memory (1951) 16 16 cm 2 (128 128 bit) Semiconductor Memory Classification Read-Write Memory Non-Volatile Read-Write Memory Read-Only Memory Random Access Non-Random Access EPROM E 2 PROM
More informationMemory Design I. Semiconductor Memory Classification. Read-Write Memories (RWM) Memory Scaling Trend. Memory Scaling Trend
Array-Structured Memory Architecture Memory Design I Professor hris H. Kim University of Minnesota Dept. of EE chriskim@ece.umn.edu 2 Semiconductor Memory lassification Read-Write Memory Non-Volatile Read-Write
More informationColumn decoder using PTL for memory
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE) e-issn: 2278-2834,p- ISSN: 2278-8735. Volume 5, Issue 4 (Mar. - Apr. 2013), PP 07-14 Column decoder using PTL for memory M.Manimaraboopathy
More informationMemory in Digital Systems
MEMORIES Memory in Digital Systems Three primary components of digital systems Datapath (does the work) Control (manager) Memory (storage) Single bit ( foround ) Clockless latches e.g., SR latch Clocked
More informationSense Amplifiers 6 T Cell. M PC is the precharge transistor whose purpose is to force the latch to operate at the unstable point.
Announcements (Crude) notes for switching speed example from lecture last week posted. Schedule Final Project demo with TAs. Written project report to include written evaluation section. Send me suggestions
More informationChapter 3 Semiconductor Memories. Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan
Chapter 3 Semiconductor Memories Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan Outline Introduction Random Access Memories Content Addressable Memories Read
More informationEE141-Fall 2007 Digital Integrated Circuits. ROM and Flash. Announcements. Read-Only Memory Cells. Class Material. Semiconductor Memory Classification
EE4-Fall 2007 igital Integrated Circuits Lecture 29 ROM, Flash, and RAM ROM and Flash 4 4 Announcements Final ec. 20 th Room TBA Final review sessions: Mon. ec. 7 th 3:30pm, 550 Cory Tues. ec. 7 th 3:30pm,
More informationChapter 5 Internal Memory
Chapter 5 Internal Memory Memory Type Category Erasure Write Mechanism Volatility Random-access memory (RAM) Read-write memory Electrically, byte-level Electrically Volatile Read-only memory (ROM) Read-only
More informationDigital Integrated Circuits (83-313) Lecture 7: SRAM. Semester B, Lecturer: Dr. Adam Teman Itamar Levi, Robert Giterman.
Digital Integrated Circuits (83-313) Lecture 7: SRAM Semester B, 2016-17 Lecturer: Dr. Adam Teman TAs: Itamar Levi, Robert Giterman 16 May 2017 Disclaimer: This course was prepared, in its entirety, by
More informationCMOS Logic Circuit Design Link( リンク ): センター教官講義ノートの下 CMOS 論理回路設計
CMOS Logic Circuit Design http://www.rcns.hiroshima-u.ac.jp Link( リンク ): センター教官講義ノートの下 CMOS 論理回路設計 Memory Circuits (Part 1) Overview of Memory Types Memory with Address-Based Access Principle of Data Access
More informationWilliam Stallings Computer Organization and Architecture 6th Edition. Chapter 5 Internal Memory
William Stallings Computer Organization and Architecture 6th Edition Chapter 5 Internal Memory Semiconductor Memory Types Semiconductor Memory RAM Misnamed as all semiconductor memory is random access
More informationInternal Memory. Computer Architecture. Outline. Memory Hierarchy. Semiconductor Memory Types. Copyright 2000 N. AYDIN. All rights reserved.
Computer Architecture Prof. Dr. Nizamettin AYDIN naydin@yildiz.edu.tr nizamettinaydin@gmail.com Internal Memory http://www.yildiz.edu.tr/~naydin 1 2 Outline Semiconductor main memory Random Access Memory
More informationThe Memory Hierarchy. Daniel Sanchez Computer Science & Artificial Intelligence Lab M.I.T. April 3, 2018 L13-1
The Memory Hierarchy Daniel Sanchez Computer Science & Artificial Intelligence Lab M.I.T. April 3, 2018 L13-1 Memory Technologies Technologies have vastly different tradeoffs between capacity, latency,
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 22: April 11, 2017 Memory Overview, Memory Periphery Lecture Outline! Memory " Periphery " Serial Access Memories! Design Methodologies "
More informationComputer Organization. 8th Edition. Chapter 5 Internal Memory
William Stallings Computer Organization and Architecture 8th Edition Chapter 5 Internal Memory Semiconductor Memory Types Memory Type Category Erasure Write Mechanism Volatility Random-access memory (RAM)
More informationOrganization. 5.1 Semiconductor Main Memory. William Stallings Computer Organization and Architecture 6th Edition
William Stallings Computer Organization and Architecture 6th Edition Chapter 5 Internal Memory 5.1 Semiconductor Main Memory 5.2 Error Correction 5.3 Advanced DRAM Organization 5.1 Semiconductor Main Memory
More informationECE321 Electronics I
ECE321 Electronics I Lecture 28: DRAM & Flash Memories Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Tuesday 2:00-3:00PM or by appointment E-mail: payman@ece.unm.edu Slide: 1 Review of Last Lecture
More informationMemory in Digital Systems
MEMORIES Memory in Digital Systems Three primary components of digital systems Datapath (does the work) Control (manager) Memory (storage) Single bit ( foround ) Clockless latches e.g., SR latch Clocked
More informationENEE 359a Digital VLSI Design
SLIDE 1 ENEE 359a Digital VLSI Design CMOS Memories and Systems: Part II, Prof. blj@eng.umd.edu Credit where credit is due: Slides contain original artwork ( Jacob 1999 2004, Wang 2003/4) as well as material
More informationChapter 4 Main Memory
Chapter 4 Main Memory Course Outcome (CO) - CO2 Describe the architecture and organization of computer systems Program Outcome (PO) PO1 Apply knowledge of mathematics, science and engineering fundamentals
More informationEEC 483 Computer Organization
EEC 483 Computer Organization Chapter 5 Large and Fast: Exploiting Memory Hierarchy Chansu Yu Table of Contents Ch.1 Introduction Ch. 2 Instruction: Machine Language Ch. 3-4 CPU Implementation Ch. 5 Cache
More informationLecture 20: CAMs, ROMs, PLAs
Lecture 2: CAMs, ROMs, PLAs Outline Content-Addressable Memories Read-Only Memories Programmable Logic Arrays 2: CAMs, ROMs, and PLAs CMOS VLSI Design 4th Ed. 2 CAMs Extension of ordinary memory (e.g.
More information! Memory. " Periphery. " Serial Access Memories. ! Design Methodologies. " Hierarchy, Modularity, Regularity, Locality. ! Implementation Methodologies
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lecture Outline Memory Periphery Lec 22: April 11, 2017 Memory Overview, Memory Periphery Serial Access Memories Design Methodologies Hierarchy,
More informationCOMP3221: Microprocessors and. and Embedded Systems. Overview. Lecture 23: Memory Systems (I)
COMP3221: Microprocessors and Embedded Systems Lecture 23: Memory Systems (I) Overview Memory System Hierarchy RAM, ROM, EPROM, EEPROM and FLASH http://www.cse.unsw.edu.au/~cs3221 Lecturer: Hui Wu Session
More informationConcept of Memory. The memory of computer is broadly categories into two categories:
Concept of Memory We have already mentioned that digital computer works on stored programmed concept introduced by Von Neumann. We use memory to store the information, which includes both program and data.
More informationAddress connections Data connections Selection connections
Interface (cont..) We have four common types of memory: Read only memory ( ROM ) Flash memory ( EEPROM ) Static Random access memory ( SARAM ) Dynamic Random access memory ( DRAM ). Pin connections common
More informationCS250 VLSI Systems Design Lecture 9: Memory
CS250 VLSI Systems esign Lecture 9: Memory John Wawrzynek, Jonathan Bachrach, with Krste Asanovic, John Lazzaro and Rimas Avizienis (TA) UC Berkeley Fall 2012 CMOS Bistable Flip State 1 0 0 1 Cross-coupled
More informationECE 2300 Digital Logic & Computer Organization
ECE 2300 Digital Logic & Computer Organization Spring 201 Memories Lecture 14: 1 Announcements HW6 will be posted tonight Lab 4b next week: Debug your design before the in-lab exercise Lecture 14: 2 Review:
More informationMemory and Programmable Logic
Memory and Programmable Logic Memory units allow us to store and/or retrieve information Essentially look-up tables Good for storing data, not for function implementation Programmable logic device (PLD),
More informationChapter 7. Storage Components
7. Storage Components 7- Chapter 7. Storage Components ntroduction Storage components store data and perform simple data transformations, such as counting and shifting. Registers, counters, register files,
More informationThe Memory Hierarchy 1
The Memory Hierarchy 1 What is a cache? 2 What problem do caches solve? 3 Memory CPU Abstraction: Big array of bytes Memory memory 4 Performance vs 1980 Processor vs Memory Performance Memory is very slow
More informationEE577b. Register File. By Joong-Seok Moon
EE577b Register File By Joong-Seok Moon Register File A set of registers that store data Consists of a small array of static memory cells Smallest size and fastest access time in memory hierarchy (Register
More informationBasic Organization Memory Cell Operation. CSCI 4717 Computer Architecture. ROM Uses. Random Access Memory. Semiconductor Memory Types
CSCI 4717/5717 Computer Architecture Topic: Internal Memory Details Reading: Stallings, Sections 5.1 & 5.3 Basic Organization Memory Cell Operation Represent two stable/semi-stable states representing
More informationMemory in Digital Systems
MEMORIES Memory in Digital Systems Three primary components of digital systems Datapath (does the work) Control (manager) Memory (storage) Single bit ( foround ) Clockless latches e.g., SR latch Clocked
More informationCS 152 Computer Architecture and Engineering
CS 152 Computer Architecture and Engineering Lecture 13 Memory and Interfaces 2005-3-1 John Lazzaro (www.cs.berkeley.edu/~lazzaro) TAs: Ted Hong and David Marquardt www-inst.eecs.berkeley.edu/~cs152/ Last
More informationCS 152 Computer Architecture and Engineering
CS 152 Computer Architecture and Engineering Lecture 10 -- Cache I 2014-2-20 John Lazzaro (not a prof - John is always OK) TA: Eric Love www-inst.eecs.berkeley.edu/~cs152/ Play: CS 152 L10: Cache I UC
More informationThe Memory Hierarchy Part I
Chapter 6 The Memory Hierarchy Part I The slides of Part I are taken in large part from V. Heuring & H. Jordan, Computer Systems esign and Architecture 1997. 1 Outline: Memory components: RAM memory cells
More informationMemories. Design of Digital Circuits 2017 Srdjan Capkun Onur Mutlu.
Memories Design of Digital Circuits 2017 Srdjan Capkun Onur Mutlu http://www.syssec.ethz.ch/education/digitaltechnik_17 Adapted from Digital Design and Computer Architecture, David Money Harris & Sarah
More informationELCT 912: Advanced Embedded Systems
Advanced Embedded Systems Lecture 2: Memory and Programmable Logic Dr. Mohamed Abd El Ghany, Memory Random Access Memory (RAM) Can be read and written Static Random Access Memory (SRAM) Data stored so
More informationSpiral 2-9. Tri-State Gates Memories DMA
2-9.1 Spiral 2-9 Tri-State Gates Memories DMA 2-9.2 Learning Outcomes I understand how a tri-state works and the rules for using them to share a bus I understand how SRAM and DRAM cells perform reads and
More informationECE 485/585 Microprocessor System Design
Microprocessor System Design Lecture 4: Memory Hierarchy Memory Taxonomy SRAM Basics Memory Organization DRAM Basics Zeshan Chishti Electrical and Computer Engineering Dept Maseeh College of Engineering
More informationENEE 759H, Spring 2005 Memory Systems: Architecture and
SLIDE, Memory Systems: DRAM Device Circuits and Architecture Credit where credit is due: Slides contain original artwork ( Jacob, Wang 005) Overview Processor Processor System Controller Memory Controller
More informationLecture 14: CAMs, ROMs, and PLAs
Introduction to CMOS VLSI Design Lecture 4: CAMs, ROMs, and PLAs David Harris Harvey Mudd College Spring 24 Outline Content-Addressable Memories Read-Only Memories Programmable Logic Arrays 4: CAMs, ROMs,
More informationLearning Outcomes. Spiral 2-9. Typical Logic Gate TRI-STATE GATES
2-9.1 Learning Outcomes 2-9.2 Spiral 2-9 Tri-State Gates Memories DMA I understand how a tri-state works and the rules for using them to share a bus I understand how SRAM and DRAM cells perform reads and
More informationTopics. ! PLAs.! Memories: ! Datapaths.! Floor Planning ! ROM;! SRAM;! DRAM. Modern VLSI Design 2e: Chapter 6. Copyright 1994, 1998 Prentice Hall
Topics! PLAs.! Memories:! ROM;! SRAM;! DRAM.! Datapaths.! Floor Planning Programmable logic array (PLA)! Used to implement specialized logic functions.! A PLA decodes only some addresses (input values);
More informationUNIT V (PROGRAMMABLE LOGIC DEVICES)
UNIT V (PROGRAMMABLE LOGIC DEVICES) Introduction There are two types of memories that are used in digital systems: Random-access memory(ram): perform both the write and read operations. Read-only memory(rom):
More informationWilliam Stallings Computer Organization and Architecture 8th Edition. Chapter 5 Internal Memory
William Stallings Computer Organization and Architecture 8th Edition Chapter 5 Internal Memory Semiconductor Memory The basic element of a semiconductor memory is the memory cell. Although a variety of
More informationChapter 5. Internal Memory. Yonsei University
Chapter 5 Internal Memory Contents Main Memory Error Correction Advanced DRAM Organization 5-2 Memory Types Memory Type Category Erasure Write Mechanism Volatility Random-access memory(ram) Read-write
More informationDigital Systems. Semiconductor memories. Departamentul de Bazele Electronicii
Digital Systems Semiconductor memories Departamentul de Bazele Electronicii Outline ROM memories ROM memories PROM memories EPROM memories EEPROM, Flash, MLC memories Applications with ROM memories extending
More informationPROGRAMMABLE MODULES SPECIFICATION OF PROGRAMMABLE COMBINATIONAL AND SEQUENTIAL MODULES
PROGRAMMABLE MODULES SPECIFICATION OF PROGRAMMABLE COMBINATIONAL AND SEQUENTIAL MODULES. psa. rom. fpga THE WAY THE MODULES ARE PROGRAMMED NETWORKS OF PROGRAMMABLE MODULES EXAMPLES OF USES Programmable
More informationDesign and Implementation of Low Leakage Power SRAM System Using Full Stack Asymmetric SRAM
Design and Implementation of Low Leakage Power SRAM System Using Full Stack Asymmetric SRAM Rajlaxmi Belavadi 1, Pramod Kumar.T 1, Obaleppa. R. Dasar 2, Narmada. S 2, Rajani. H. P 3 PG Student, Department
More informationFPGA Programming Technology
FPGA Programming Technology Static RAM: This Xilinx SRAM configuration cell is constructed from two cross-coupled inverters and uses a standard CMOS process. The configuration cell drives the gates of
More informationRead and Write Cycles
Read and Write Cycles The read cycle is shown. Figure 41.1a. The RAS and CAS signals are activated one after the other to latch the multiplexed row and column addresses respectively applied at the multiplexed
More informationEmbedded Systems Design: A Unified Hardware/Software Introduction. Outline. Chapter 5 Memory. Introduction. Memory: basic concepts
Hardware/Software Introduction Chapter 5 Memory Outline Memory Write Ability and Storage Permanence Common Memory Types Composing Memory Memory Hierarchy and Cache Advanced RAM 1 2 Introduction Memory:
More informationEmbedded Systems Design: A Unified Hardware/Software Introduction. Chapter 5 Memory. Outline. Introduction
Hardware/Software Introduction Chapter 5 Memory 1 Outline Memory Write Ability and Storage Permanence Common Memory Types Composing Memory Memory Hierarchy and Cache Advanced RAM 2 Introduction Embedded
More informationTopics of this Slideset. CS429: Computer Organization and Architecture. Digital Signals. Truth Tables. Logic Design
Topics of this Slideset CS429: Computer Organization and rchitecture Dr. Bill Young Department of Computer Science University of Texas at ustin Last updated: July 5, 2018 at 11:55 To execute a program
More informationCS 320 February 2, 2018 Ch 5 Memory
CS 320 February 2, 2018 Ch 5 Memory Main memory often referred to as core by the older generation because core memory was a mainstay of computers until the advent of cheap semi-conductor memory in the
More informationComputer Organization and Assembly Language (CS-506)
Computer Organization and Assembly Language (CS-506) Muhammad Zeeshan Haider Ali Lecturer ISP. Multan ali.zeeshan04@gmail.com https://zeeshanaliatisp.wordpress.com/ Lecture 2 Memory Organization and Structure
More informationEECS150 - Digital Design Lecture 16 Memory 1
EECS150 - Digital Design Lecture 16 Memory 1 March 13, 2003 John Wawrzynek Spring 2003 EECS150 - Lec16-mem1 Page 1 Memory Basics Uses: Whenever a large collection of state elements is required. data &
More informationMemory Technology. (ROM) (Nonvolatile) (Nonvolatile) SerialInIn (SIPO) Erasable Erasable. Erasable Erasable Programmable
M2 Systems M2 line Hierarchy Cache Blocking Cache Aware Programming S, D Virtual Virtual Machines Non-volatile, Persistent NVM Technology Arrays Arrays Random RandomAccess Access Read/Write Read/Write
More informationSilicon Memories. Why store things in silicon? It s fast!!! Compatible with logic devices (mostly) The main goal is to be cheap
Memories and SRAM 1 Silicon Memories Why store things in silicon? It s fast!!! Compatible with logic devices (mostly) The main goal is to be cheap Dense -- The smaller the bits, the less area you need,
More informationRandom-Access Memory (RAM) CS429: Computer Organization and Architecture. SRAM and DRAM. Flash / RAM Summary. Storage Technologies
Random-ccess Memory (RM) CS429: Computer Organization and rchitecture Dr. Bill Young Department of Computer Science University of Texas at ustin Key Features RM is packaged as a chip The basic storage
More informationCS152 Computer Architecture and Engineering Lecture 16: Memory System
CS152 Computer Architecture and Engineering Lecture 16: System March 15, 1995 Dave Patterson (patterson@cs) and Shing Kong (shing.kong@eng.sun.com) Slides available on http://http.cs.berkeley.edu/~patterson
More informationOutline. Field Programmable Gate Arrays. Programming Technologies Architectures. Programming Interfaces. Historical perspective
Outline Field Programmable Gate Arrays Historical perspective Programming Technologies Architectures PALs, PLDs,, and CPLDs FPGAs Programmable logic Interconnect network I/O buffers Specialized cores Programming
More informationSilicon Memories. Why store things in silicon? It s fast!!! Compatible with logic devices (mostly)
Memories and SRAM 1 Silicon Memories Why store things in silicon? It s fast!!! Compatible with logic devices (mostly) The main goal is to be cheap Dense -- The smaller the bits, the less area you need,
More informationDesign and Implementation of an AHB SRAM Memory Controller
Design and Implementation of an AHB SRAM Memory Controller 1 Module Overview Learn the basics of Computer Memory; Design and implement an AHB SRAM memory controller, which replaces the previous on-chip
More informationSpiral 2-8. Cell Layout
2-8.1 Spiral 2-8 Cell Layout 2-8.2 Learning Outcomes I understand how a digital circuit is composed of layers of materials forming transistors and wires I understand how each layer is expressed as geometric
More informationSummer 2003 Lecture 18 07/09/03
Summer 2003 Lecture 18 07/09/03 NEW HOMEWORK Instruction Execution Times: The 8088 CPU is a synchronous machine that operates at a particular clock frequency. In the case of the original IBM PC, that clock
More informationChapter 7- Memory System Design
Chapter 7- Memory ystem esign RM structure: Cells and Chips Memory boards and modules Cache memory Virtual memory The memory as a sub-system of the computer CPU Main Memory Interface equence of events:
More informationMemory Overview. Overview - Memory Types 2/17/16. Curtis Nelson Walla Walla University
Memory Overview Curtis Nelson Walla Walla University Overview - Memory Types n n n Magnetic tape (used primarily for long term archive) Magnetic disk n Hard disk (File, Directory, Folder) n Floppy disks
More informationECEN 449 Microprocessor System Design. Memories. Texas A&M University
ECEN 449 Microprocessor System Design Memories 1 Objectives of this Lecture Unit Learn about different types of memories SRAM/DRAM/CAM Flash 2 SRAM Static Random Access Memory 3 SRAM Static Random Access
More information