Lecture 13: SRAM. Slides courtesy of Deming Chen. Slides based on the initial set from David Harris. 4th Ed.

Transcription

1 Lecture 13: SRAM Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design

2 Outline Memory Arrays SRAM Architecture SRAM Cell Decoders Column Circuitry Multiple Ports Serial Access Memories Readings: Chapter and

3 Memory Arrays Memory Arrays Random Access Memory Serial Access Memory Content Addressable Memory (CAM) Read/Write Memory (RAM) (Volatile) Read Only Memory (ROM) (Nonvolatile) Shift Registers Queues Static RAM (SRAM) Dynamic RAM (DRAM) Serial In Parallel Out (SIPO) Parallel In Serial Out (PISO) First In First Out (FIFO) Last In First Out (LIFO) Mask ROM Programmable ROM (PROM) Erasable Programmable ROM (EPROM) Electrically Erasable Programmable ROM (EEPROM) Flash ROM 3

4 Array Architecture 2 n words of 2 m bits each If n >> m, fold by 2 k into fewer rows of more columns Good regularity easy to design Very high density if good cells are used 4

5 12T SRAM Cell Basic building block: SRAM Cell Holds one bit of information, like a latch Must be read and written 12-transistor (12T) SRAM cell Use a simple latch connected to bitline 46 x 75 l unit cell bit write write_b read read_b 5

6 6T SRAM Cell Cell size accounts for most of array size Reduce cell size at expense of complexity 6T SRAM Cell Used in most commercial chips Data stored in cross-coupled inverters Read: bit Precharge bit, bit_b word Raise wordline Write: Drive data onto bit, bit_b Raise wordline bit_b 6

7 SRAM Read Precharge both bitlines high Then turn on wordline One of the two bitlines will be pulled down by the cell Ex: A = 0, A_b = 1 bit discharges, bit_b stays high But A bumps up slightly Read stability A must not flip N1 >> N2 bit bit_b word P1 P2 N2 N4 A A_b N1 N3 A_b bit_b word bit 0.5 A time (ps) 7

8 SRAM Write Drive one bitline high, the other low Then turn on wordline Bitlines overpower cell with new value Ex: A = 0, A_b = 1, bit = 1, bit_b = 0 Force A_b low, then A rises high Writability Must overpower feedback inverter word 1.5 bit N2 A A_b P1 N1 A P2 N3 A_b bit_b N4 N2 >> P1 1.0 bit_b 0.5 word time (ps) 8

9 SRAM Sizing High bitlines must not overpower inverters during reads But low bitlines must write new value into cell bit bit_b word med weak med A strong A_b 9

10 bit_b_v1f bit_v1f bit_b_v1f bit_v1f SRAM Column Example Read Write Bitline Conditioning Bitline Conditioning 2 2 word_q1 More Cells word_q1 More Cells SRAM Cell SRAM Cell H H write_q1 1 out_b_v1r out_v1r data_s1 2 word_q1 bit_v1f out_v1r 10

11 SRAM Layout Cell size is critical: 26 x 45 l (even smaller in industry) Tile cells sharing V DD, GND, bitline contacts GND BIT BIT_B GND VDD WORD Cell boundary 11

12 Thin Cell In nanometer CMOS Avoid bends in polysilicon and diffusion Orient all transistors in one direction Lithographically friendly or thin cell layout fixes this Also reduces length and capacitance of bitlines 12

13 Commercial SRAMs Five generations of Intel SRAM cell micrographs Transition to thin cell at 65 nm Steady scaling of cell area 13

14 Decoders n:2 n decoder consists of 2 n n-input AND gates One needed for each row of memory Build AND from NAND or NOR gates Static CMOS A1 A0 A1 Pseudo-nMOS A0 word0 word1 word2 A1 A word word0 word1 word2 1/2 A0 A word 8 word3 word3 14

15 Decoder Layout Decoders must be pitch-matched to SRAM cell Requires very skinny gates A3 A3 A2 A2 A1 A1 A0 A0 VDD word GND NAND gate buffer inverter 15

16 Large Decoders For n > 4, NAND gates become slow Break large gates into multiple smaller gates A3 A2 A1 A0 word0 word1 word2 word3 word15 16

17 Predecoding Many of these gates are redundant Factor out common gates into predecoder Saves area Same path effort A3 A2 A1 A0 predecoders 1 of 4 hot predecoded lines word0 word1 word2 word3 word15 17

18 Column Circuitry Some circuitry is required for each column Bitline conditioning Sense amplifiers Column multiplexing 18

19 Bitline Conditioning Precharge bitlines high before reads bit bit_b Equalize bitlines to minimize voltage difference when using sense amplifiers bit bit_b 19

20 Sense Amplifiers Bitlines have many cells attached Ex: 32-kbit SRAM has 128 rows x 256 cols 128 cells on each bitline t pd (C/I) DV Even with shared diffusion contacts, 64C of diffusion capacitance (big C) Discharged slowly through small transistors (small I) Sense amplifiers are triggered on small voltage swing (reduce DV) 20

21 Differential Pair Amp Differential pair requires no clock But always dissipates static power sense_b bit P1 N1 N2 P2 sense bit_b N3 21

22 Clocked Sense Amp Clocked sense amp saves power Requires sense_clk after enough bitline swing Isolation transistors cut off large bitline capacitance bit bit_b sense_clk isolation transistors regenerative feedback sense sense_b 22

23 Twisted Bitlines Sense amplifiers also amplify noise Coupling noise is severe in modern processes Try to couple equally onto bit and bit_b Done by twisting bitlines b0 b0_b b1 b1_b b2 b2_b b3 b3_b 23

24 Column Multiplexing Recall that array may be folded for good aspect ratio Ex: 2 kword x 16 folded into 256 rows x 128 columns Must select 16 output bits from the 128 columns Requires 16 8:1 column multiplexers 24

25 Tree Decoder Mux Column mux can use pass transistors Use nmos only, precharge outputs One design is to use k series transistors for 2 k :1 mux No external decoder logic needed A0 A0 B0 B1 B2 B3 B4 B5 B6 B7 B0 B1 B2 B3 B4 B5 B6 B7 A1 A1 A2 A2 Y to sense amps and write circuits Y 25

26 Single Pass-Gate Mux Or eliminate series transistors with separate decoder A1 A0 B0 B1 B2 B3 Y 26

27 Multiple Ports We have considered single-ported SRAM One read or one write on each cycle Multiported SRAM are needed for register files Examples: Multicycle MIPS must read two sources or write a result on some cycles Pipelined MIPS must read two sources and write a third result each cycle Superscalar MIPS must read and write many sources and results each cycle 27

28 Dual-Ported SRAM Simple dual-ported SRAM Two independent single-ended reads Or one differential write worda wordb bit bit_b Do two reads and one write by time multiplexing Read during ph1, write during ph2 28

29 Multi-Ported SRAM Adding more access transistors hurts read stability Multiported SRAM isolates reads from state node Single-ended bitlines save area 29

30 Large SRAMs Large SRAMs are split into subarrays for speed Ex: UltraSparc 512KB cache KB subarrays Each have 16 8KB banks 256 rows x 256 cols / bank 60% subarray area efficiency Also space for tags & control [Shin05] 30

31 Serial Access Memories Serial access memories do not use an address Shift Registers Tapped Delay Lines Serial In Parallel Out (SIPO) Parallel In Serial Out (PISO) Queues (FIFO, LIFO) 31

32 Shift Register Shift registers store and delay data Simple design: cascade of registers Watch your hold times! clk Din 8 Dout 32

33 counter counter Denser Shift Registers Flip-flops aren t very area-efficient For large shift registers, keep data in SRAM instead Move read/write pointers to RAM rather than data Initialize read address to first entry, write to last Increment address on each cycle Din clk readaddr writeaddr dual-ported SRAM reset Dout 33

34 SR1 SR2 SR4 SR8 SR16 SR32 Tapped Delay Line A tapped delay line is a shift register with a programmable number of stages Set number of stages with delay controls to mux Ex: 0 63 stages of delay clk Din Dout delay5 delay4 delay3 delay2 delay1 delay0 34

35 Serial In Parallel Out 1-bit shift register reads in serial data After N steps, presents N-bit parallel output clk Sin P0 P1 P2 P3 35

36 Parallel In Serial Out Load all N bits in parallel when shift = 0 Then shift one bit out per cycle shift/load clk P0 P1 P2 P3 Sout 36

37 Queues Queues allow data to be read and written at different rates. Read and write each use their own clock, data Queue indicates whether it is full or empty Build with SRAM and read/write counters (pointers) WriteClk WriteData FULL Queue ReadClk ReadData EMPTY 37

38 FIFO, LIFO Queues First In First Out (FIFO) Initialize read and write pointers to first element Queue is EMPTY On write, increment write pointer If write almost catches read, Queue is FULL On read, increment read pointer Last In First Out (LIFO) Also called a stack Use a single stack pointer for read and write 38

39 Summary SRAM design Digital part and analog part Logic, layout and sizing Shift registers and others Next lecture CAMs, ROMs and PLAs Readings: