>Introduction Ibiden Products Over View and Technology Trend. Embedding technology and Expectation.

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2 Agenda >Introduction Ibiden Products Over View and Technology Trend. Embedding technology and Expectation. >Embedded Device Technology #1. Embedded MLCC in FCCSP Substrate. #2. Embedded Active Device. #3. Embedded Thin Film Capacitor in FCPKG Substrate #4. Embedded Active Device as 2.5D solution. >Summary

3 Agenda >Introduction Ibiden Products Over View and Technology Trend. Embedding technology and Expectation. >Embedded Device Technology #1. Embedded MLCC in FCCSP Substrate. #2. Embedded Active Device. #3. Embedded Thin Film Capacitor in FCPKG Substrate #4. Embedded Active Device as 2.5D solution. >Summary

4 Ibiden Business Area and Technology Trend FCPKG 2.5D High BW / Low PW Embedded(MLCC/Thin Film Cap) FCCSP 2.5D 3D Embedded(MLCC) High BW / Low PW Thin PWB Coreless / e-tfc High Thermal Conductivity High density is required for all area.

5 Mother Board Industry Trend Higher data processing, Higher Bandwidth Signaling Higher TDP* *Thermal Design Power Thinner POP Si Integration DCA, TSV, 3D, Module e-active/passive in PWB

6 Expectation for Embedded Technology High Performance Computing Embedded Active Device as 2.5D Embedded Thin Film Capacitor for High BW / Low PW Mobile Performance Computing Embedded MLCC for Higher PW efficiency Embedded Active Device for High dense Module

7 Agenda >Introduction Ibiden Products Over View and Technology Trend. Embedding technology and Expectation. >Embedded Device Technology #1. Embedded MLCC in FCCSP Substrate. #2. Embedded Active Device. #3. Embedded Thin Film Capacitor in FCPKG Substrate #4. Embedded Active Device as 2.5D solution. >Summary

8 Expectation for Embedded Technology High Performance Computing Embedded Active Device as 2.5D Embedded Thin Film Capacitor for High BW / Low PW Mobile Performance Computing Embedded MLCC for Higher PW efficiency Embedded Active Device for High dense Module

9 Embedded MLCC for Higher PW efficiency Power = k x C x f (Clock freq.) x (Vdd) 2 Higher clock frequency Power Integrity Improvement Power Consumption [W] Standard FCCSP FCCSP Embedded MLCC Clock Frequency [GHz] Power Supply [V] FCCSP Embedded MLCC Time [nsec] Standard FCCSP Current Vdd Vdd reduction Threshold V *Decoupling cap underneath Die Ł Lower Vdd noise Ł Lower Vdd Ł Lower Power/High speed

10 Reliability Test Results of FCCSP w/ embedded MLCC MLCC embedded substrate passed the general reliability requirement. Pre-conditioning : 125 deg.c/24hr (Bake) + 60 deg.c/60%rh/40hr(msl3a) Test item Standard Test Condition N Success criteria Result Moisture Reflow Sensitivity J-STD-020 Lead free Reflow (Peak 260degC) / 5times 10units No delamination (T-SAM) No Mechanical and Electrical failure. Temp. Cycle JESD22-A to 125deg.C / 500cycle 10units R-shift < 10% No Mechanical and Electrical failure.

11 Agenda >Introduction Ibiden Products Over View and Technology Trend. Embedding technology and Expectation. >Embedded Device Technology #1. Embedded MLCC in FCCSP Substrate. #2. Embedded Active Device. #3. Embedded Thin Film Capacitor in FCPKG Substrate #4. Embedded Active Device as 2.5D solution. >Summary

12 Expectation for Embedded Technology High Performance Computing Embedded Active Device as 2.5D Embedded Thin Film Capacitor for High BW / Low PW Mobile Performance Computing Embedded MLCC for Higher PW efficiency Embedded Active Device for High dense Module

13 Experience of Embedded Active Device Fig. Cross section of manufactured sample Substrate Active Device Item Unit size / Thickness Layer count / Thickness Array size Size / Thickness 62mm Specifications 4.0x3.5mm / 0.38mmt 4Layers (1-2-1) 230mm 230x62mm (728 Units/Array) 3.0x2.5mm / 0.2mmt

14 Reliability Test Results and Control Warpage No issue at general reliability test. Test item Standard Test Condition N Success criteria Result Moisture Reflow Sensitivity J-STD-020 Lead free Reflow (Peak 260degC) / 5times 10units No delamination (T-SAM) No Mechanical and Electrical failure. Temp. Cycle JESD22-A to 125deg.C / 500cycle 10units R-shift < 10% No Mechanical and Electrical failure. Warpage measurement result of substrate Array. Tech. Current Improved Warpage Measureme Results at Room temp Contouri mage Diagonal image 2mm 1mm 0mm 230mm 2mm 1mm 0mm 230mm CTE mismatch b/w organic substrate and Silicon device causes the warp. Warpage reduce technology improved the Array warpage.

15 Agenda >Introduction Ibiden Products Over View and Technology Trend. Embedding technology and Expectation. >Embedded Device Technology #1. Embedded MLCC in FCCSP Substrate. #2. Embedded Active Device. #3. Embedded Thin Film Capacitor in FCPKG Substrate #4. Embedded Active Device as 2.5D solution. >Summary

16 Expectation for Embedded Technology High Performance Computing Embedded Active Device as 2.5D Embedded Thin Film Capacitor for High BW / Low PW Mobile Performance Computing Embedded MLCC for Higher PW efficiency Embedded Active Device for High dense Module

17 Embedded Thin Film Capacitor in the Substrate

18 Embedded Thin Film Capacitor in the Substrate

19 Embedded Thin Film Capacitor in the Substrate

20 Embedded Thin Film Capacitor in the Substrate

21 Embedded Thin Film Capacitor in the Substrate

22 Embedded Thin Film Capacitor in the Substrate

23 Embedded Thin Film Capacitor in the Substrate

24 Agenda >Introduction Ibiden Products Over View and Technology Trend. Embedding technology and Expectation. >Embedded Device Technology #1. Embedded MLCC in FCCSP Substrate. #2. Embedded Active Device. #3. Embedded Thin Film Capacitor in FCPKG Substrate #4. Embedded Active Device as 2.5D solution. >Summary

25 Expectation for Embedded Technology High Performance Computing Embedded Active Device as 2.5D Embedded Thin Film Capacitor for High BW / Low PW Mobile Performance Computing Embedded MLCC for Higher PW efficiency Embedded Active Device for High dense Module

26 Agenda >Introduction Ibiden Products Over View and Technology Trend. Embedding technology and Expectation. >Embedded Device Technology #1. Embedded MLCC in FCCSP Substrate. #2. Embedded Active Device. #3. Embedded Thin Film Capacitor in FCPKG Substrate #4. Embedded Active Device as 2.5D solution. >Summary

27 Pros and Cons of EA/EP Summary What to embedded Passive device Active device Where to embedde Mother Board (MB) Package Substrate (PKG) Con s. Pro s. Con s. Pro s. Lower component cost than active. Easier to guarantee function. Easier to keep component performance in process MB size need to be shrunk enough to compensated cost adder of process and component for embedding. But normally embedding area is too small of MB to compensated cost adder. Embedding in large area of substrate to compensated cost+ for embedding. Expected price is higher than MB case. Ł Easier to find business benefit. No significant con s. Higher drop test reliability To replace 2 nd level Interconnection è (ex.) 0.2mm via connection pitch to device is valuable Need very high process yield not to kill expensive active device. Need close relationship btw device / board / application business to guarantee device performance Non reflow assembly ŁEscape stress from Si / organic CTE mismatch Easier to manage warpage. (In addition to Mother board case,) Need to replace 1 st level Interconnection è (ex.) 0.2mm via connection pitch to device is not enough

28 Challenge Where we are?

29 Challenge Where we are?

30 Thank you very much.