FOUNDRY Services. Vincent HIRTZBERGER ASH2V Consulting RADIOCOMP MOSCOW 18 th February 2015

Transcription

1 FOUNDRY Services Vincent HIRTZBERGER ASH2V Consulting RADIOCOMP MOSCOW 18 th February 2015

2 UMS at a glance European source of RF MMIC solutions, GaAs and GaN foundry services. Founded in 1996 by gathering Thales and EADS IIIV activities Industrial facilities in: Ulm: GaAs & GaN technology development and production Villebon: HQ, product dev, backend production, support 65 M turnover (2013) Ulm 350 people More than 15M parts delivered in 2013 World Wide leader for components used in automotive car radars Most of UMS processes are Space evaluated European Preferred Parts List Villebon 2

3 UMS Offer Products Foundry Services Power Amplifiers up to 180W Very Low Noise Amplifiers Mixed signal Multichip modules ASIC on demand Large portfolio of GaAs processes: 0.7µm MESFET 0.1 & 0.25µm phemts 1µm Schottky 2µm HBT family Passive process 0.25µm GaN for MMIC Early access mode NRE (Prototype) & ASIC (Production) Detailed PDKs GaAs GaN Foundry training MPW (Multi Project Wafer) runs Date / Ref doc 3

4 The foundry service Offer Diced wafer on film MMIC RF Test & Inspection Known Good Dies in Gelpak Box Packaging Services Tools and Support Process Design Kits compatible with ADS for all process or others for some process. Design Manuals Intensive Training Course MultiProject Wafers HP07 PH10 GaN BES PH25 PPH25X PPH25 PH15 4

5 3 Foundry offers Standard processes Stable and qualified technology Accurate simulation models Spread data Guaranteed processing time Fixed services with all in depth options Early access mode For advanced process Limited model support Available process variation Early access to advanced processes for R&D purpose MPW Mode Multi Customer runs Low budget Limited support Chips dimensions imposed by UMS MPW project dedicated to Russian customers to be launched in

6 Typical Flow Commercial steps NDA Quotation P.O. Payment + com Standard FW service Review of Customers Requirements Delivery of Design Manual & Design Kit Customer performs Design & Layout Final GDSII File Design Review Customer agreement = T0 Mask Generation = T0 + 1W Wafer Fabrication PCM Tests = T0 + 8W Delivery (Die or Wafers) Optional services Design course ONWAFER MMIC TEST WAFER DICING CHIP Sorting / Packaging FINAL DELIVERY 6

7 Foundry Training 2day sessions are organized for new customers, allowing a first contact between customers and UMS Services. These two days bring an UMS inside image, and give us a feedback from customers. Customer oriented items are reviewed : Technologies and design rules. Design examples (LNA, Power amplifier, mixer) and tricks. CAD tools and electrical models. Discussions and demo with external CAD support engineers. Reliability. Packaging & Measurement capabilities for production. A third day for extrasupport can be managed for specific request. 7

8 UMS competitive position All our processes are used for producing UMS Products Low noise processes are also able to provide medium power Very homogeneous on wafer ITAR free 8

9 Process features Parameter Unit Schottky MESFET PHEMT Process BES HP07 PH25 PH15 PH10 PPH25 PPH15 PPH15X PPH25X Active layer MBE Implanted MBE MBE MBE MBE MBE MBE MBE Lg µm , , Vp V Ft (@3V) GHz Idsmax (@gmmax) Idss(@Vgs=0)) Ids (saturation) Ic (max) ma/mm ma/mm ma/mm ma/µm² N diode 1.2 Vbk Vbds Vbce Gm V V V ms/mm ms/mm <5 (6) >14 (16) 105 >6 (7) >4.5 (6) 650 >5 750 > >8 (8.5) 590 >12 > Beta Power W/mm MIM capacitor pf/mm GaAs resistor Ohm/sq TiWSi resistor Ohm/sq TaN resistor Ohm/sq Wafer thickness µm Viaholes yes yes yes yes small via yes yes small via small via Foundry Opened yes yes yes yes yes yes yes yes yes Noise db GHz 2 40 GHz GHz GHz GHz GHz GHz GHz 1,4 40 GHz 9

10 Process features Parameter Unit Process HB20P HB20M HB20S Active layer MOCVD MOCVD MOCVD Lg µm Vp V Ft (@3V) GHz Idsmax (@gmmax) Idss(@gm@Vds=0)) Ids (saturation) Ic (max) ma/mm ma/mm ma/mm ma/µm² 0,33 0,33 0,23 N diode Vbk Vbds Vbce Gm V V V ms/mm ms/mm > 16 HBT > 15 >35 Beta Power W/mm (pulsed) MIM capacitor pf/mm GaAs resistor Ohm/sq TiWSi resistor Ohm/sq _ TaN resistor Ohm/sq Wafer thickness µm Viaholes yes yes yes Foundry Opened yes yes yes Noise db Low 1/f noise Gain db 10

11 PDK: accurate electrical models Passive devices : Inductor, capacitor, resistor, line. Active devices : FETs : linear, nonlinear and noise, fully scalable models. Parallel and series switches. Schottky diodes and varactors. Data available for temperature and spread analysis. 11

12 ADS PDKs: Our PDKs are supporting simultaneously ADS2009 to ADS processes are supported Validation in progress for ADS2014 Schematic and layout libraries are linked (autolayout capability) Stack implemented in the PDK: 3D view generation (see next) DRC available for free error layout generation Date / Ref doc 12

13 Design Rule Check Run the UMS PH15 rules

14 DRC reporting

15 DRC violations

16 Air bridge Momentum EM model No layout manipulations to get the physical 3D EM air bridge modeling! Thanks to DPC overlap with EL air bridge Very accurate modeling of the inductance!

17 Via hole real 3D model (automatically generated for EM) CAPACITOR VIA to GND CAPACITOR VIA No layout manipulations to get the physical VIA HOLE 3D EM modeling! to GND

18 Foundry Lot tracking tool on UMS website 18

19 Backend services open Automatic equipment Onchip individual identification 8 vector analyzers up to 110GHz 3port equipment up to 20GHz 2 noise test benches 2 to 40GHz Mixer and VCO bench from L band to 77GHz DC stations, DC probe cards manufacturing service 3 power stations up to 40GHz in CW or pulsed mode Automated visual inspection tools 19

20 Power GaN Technologies GaN GH50 technology (Transistors) GaN GH25 Technology (MMICs) Applications Partners Up to CBand FETs, no MMIC. High voltage: 50V Transistors and Power bars up to 100W CW Family of Bare Dies Transistors to be available mid 2015 (GH50_20) Available for R&D activities Up to KuBand High voltage: 25V 35V MMIC & Power bar Radar EW / jamming TWT replacement Satcom Labs: IAF, IIIV, TRT, Mil: DGA, BWB Space: DLR, CNES, ESA Europe: FP7 BTS: 2x8x250 µm (15W) 4x8x250 µm (25W) 8x8x250 µm (40W) Date / Ref doc 20

21 UMS GH50 GaN Offer In addition to the GH25 process open in foundry mode (early access), UMS is also offering standard power product on GH50 Date / Ref doc 21

22 UMS in RUSSIA Thank you for your attention! Vincent HIRTZBERGER President of ASH2V Consulting (In charge of coordination of UMS activities in Russia) Versailles France Tel.:+33(0) Date / Ref doc 22