LP62S16256G-I Series. Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM. Revision History. Rev. No. History Issue Date Remark
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1 Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM ocument Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue ate Remark 0.0 Initial issue June 2, 2006 Preliminary PRELIMINARY (June, 2006, Version 0.0) AMIC Technology, Corp.
2 Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM Features Operating voltage: 2.7V to 3.6V Access times: 55ns / 70ns (max.) Current: Very low power version: Operating: 40mA (max.) Standby: 10µA (max.) Full static operation, no clock or refreshing required All inputs and outputs are directly TTL-compatible Common I/O using three-state output ata retention voltage: 2.0V (min.) Available in 44-pin TSOP and 48-ball CSP (6 8mm) packages All Pb-free (Lead-free) products are RoHS compliant General escription The LP62S16256G-I is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.6V. It is built using AMIC's high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. The chip enable input is provided for POWER-OWN, device enable. Two byte enable inputs and an output enable input are included for easy interfacing. ata retention is guaranteed at a power supply voltage as low as 2.0V. Product Family Product Family Operating Temperature VCC Range Speed Power issipation ata Retention Standby (ICCR, Typ.) (ISB1, Typ.) Operating (ICC2, Typ.) LP62S16256G-I -40 C ~ +85 C 2.7V~3.6V 55ns / 70ns 0.08µA 1µA 2.3mA Package Type 44L TSOP 48B CSP 1. Typical values are measured at VCC = 3.0V, TA = 25 C and not 100% tested. 2. ata retention current VCC = 2.0V. Pin Configurations TSOP CSP (Chip Size Package) 48-pin Top View A A5 A3 A A6 A A1 A0 I/O1 I/O2 I/O3 I/O4 VCC GN I/O5 I/O6 I/O7 I/O8 WE A17 A LP62S16256GV-I OE HB LB I/O16 I/O15 I/O14 I/O13 GN VCC I/O12 I/O11 I/O10 I/O9 NC A8 A9 A B C E F G H LB I/O9 I/O10 GN VCC I/O15 I/O16 NC OE HB I/O11 I/O12 I/O13 I/O14 NC A8 A0 A3 A5 A17 NC A14 A12 A9 A1 A2 NC A4 A6 A7 A16 A15 A13 I/O2 I/O4 I/O5 I/O6 WE I/O1 I/O3 VCC GN I/O7 I/O8 A10 A11 NC A A10 A A11 A A12 PRELIMINARY (June, 2006, Version 0.0) 1 AMIC Technology, Corp.
3 Block iagram A0 VCC GN A16 ECOER 512 X 8192 MEMORY ARRAY A17 I/O1 I/O9 INPUT ATA CIRCUIT COLUMN I/O INPUT ATA CIRCUIT I/O8 I/O16 LB HB OE WE CONTROL CIRCUIT Pin escriptions -- TSOP Pin No. Symbol escription 1-5, 18-27, A0 - A17 Address Inputs 6 Chip Enable Input 7-10, 13-16, 29-32, I/O1 - I/O16 ata Inputs/Outputs 17 WE Write Enable Input 39 LB Lower Byte Enable Input (I/O1 to I/O8) 40 HB Higher Byte Enable Input (I/O9 to I/O16) 41 OE Output Enable Input 11, 33 VCC Power 12, 34 GN Ground 28 NC No Connection PRELIMINARY (June, 2006, Version 0.0) 2 AMIC Technology, Corp.
4 Pin escription - CSP Symbol escription Symbol escription A0 - A17 Address Inputs HB Higher Byte Enable Input (I/O9 - I/O16) Chip Enable OE Output Enable I/O1 - I/O16 ata Input/Output VCC Power Supply WE Write Enable Input GN Ground LB Byte Enable Input (I/O1 - I/O8) NC No Connection Recommended C Operating Conditions (TA = -40 C to + 85 C) Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage V GN Ground V VIH Input High Voltage VCC V VIL Input Low Voltage V CL Output Load pf TTL Output Load PRELIMINARY (June, 2006, Version 0.0) 3 AMIC Technology, Corp.
5 Absolute Maximum Ratings* VCC to GN V to +4.0V IN, IN/OUT Volt to GN V to VCC + 0.5V Operating Temperature, Topr C to +85 C Storage Temperature, Tstg C to +125 C Power issipation, PT...0.7W *Comments Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. C Electrical Characteristics (TA = -40 C to + 85 C, VCC = 2.7V to 3.6V, GN = 0V) Symbol Parameter LP62S16256G-55LLI / 70LLI Unit Conditions Min. Typ. Max. ILI Input Leakage Current µa VIN = GN to VCC ILO Output Leakage Current µa = VIH HB = VIH or OE = VIH or WE = VIH VI/O = GN to VCC ICC Active Power Supply Current ma = VIL, II/O = 0mA ICC ma Min. Cycle, uty = 100% ynamic Operating Current = VI, II/O = 0mA ICC ma = VIL, VIH = VCC, VIL = 0V, f = 1MHz, II/O = 0 ma ISB ma = VIH VCC 3.3V ISB1 Standby Current µa VCC - 0.2V, VCC 3.3V VIN 0V VOL Output Low Voltage V IOL = 2.1 ma VOH Output High Voltage V IOH = -1.0 ma PRELIMINARY (June, 2006, Version 0.0) 4 AMIC Technology, Corp.
6 Truth Table OE WE LB HB I/O1 to I/O8 Mode I/O9 to I/O16 Mode VCC Current H X X X X Not selected Not selected ISB1, ISB X X X H H High - Z High - Z ISB1, ISB L L Read Read ICC1, ICC2, ICC L L H L H Read High - Z ICC1, ICC2, ICC H L High - Z Read ICC1, ICC2, ICC L L Write Write ICC1, ICC2, ICC L X L L H Write High - Z ICC1, ICC2, ICC H L High - Z Write ICC1, ICC2, ICC L H H L X High - Z High - Z ICC1, ICC2, ICC L H H X L High - Z High - Z ICC1, ICC2, ICC Note: X = H or L Capacitance (TA = 25 C, f = 1.0MHz) Symbol Parameter Min. Max. Unit Conditions CIN* Input Capacitance 6 pf VIN = 0V CI/O* Input/Output Capacitance 8 pf VI/O = 0V * These parameters are sampled and not 100% tested. PRELIMINARY (June, 2006, Version 0.0) 5 AMIC Technology, Corp.
7 AC Characteristics (TA = -40 C to +85 C, VCC = 2.7V to 3.6V) Symbol Parameter LP62S16256G-55LLI LP62S16256G-70LLI Unit Min. Max. Min. Max. Read Cycle trc Read Cycle Time ns taa Address Access Time ns ta Chip Enable Access Time ns tbe Byte Enable Access Time ns toe Output Enable to Output Valid ns tclz Chip Enable to Output in Low Z ns tblz Byte Enable to Output in Low Z ns tolz Output Enable to Output in Low Z ns tchz Chip isable to Output in High Z ns tbhz Byte isable to Output in High Z ns tohz Output isable to Output in High Z ns toh Output Hold from Address Change ns Write Cycle twc Write Cycle Time ns tcw Chip Enable to End of Write ns tbw Byte Enable to End of Write ns tas Address Setup Time ns taw Address Valid to End of Write ns twp Write Pulse Width ns twr Write Recovery Time ns twhz Write to Output in High Z ns tw ata to Write Time Overlap ns th ata Hold from Write Time ns tow Output Active from End of Write ns Note: tchz, tbhz and tohz and twhz are defined as the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels. PRELIMINARY (June, 2006, Version 0.0) 6 AMIC Technology, Corp.
8 Timing Waveforms (1, 2, 4) Read Cycle 1 trc Address taa toh toh OUT (1, 2, 3) Read Cycle 2 trc Address taa tclz 5 ta tchz 5 HB, LB tbe tblz 5 tbhz 5 OE tolz 5 toe tohz 5 OUT Notes: 1. WE is high for Read Cycle. 2. evice is continuously enabled = VIL, HB = VIL and, or LB = VIL. 3. Address valid prior to or coincident with and ( HB and, or LB ) transition low. 4. OE = VIL. 5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested. PRELIMINARY (June, 2006, Version 0.0) 7 AMIC Technology, Corp.
9 Timing Waveforms (continued) Write Cycle 1 (Write Enable Controlled) twc Address taw twr 3 tcw tbw HB, LB tas 1 twp 2 WE tw th ATA IN twhz 4 ATA OUT tow Write Cycle 2 (Chip Enable Controlled) twc Address tas 1 taw tcw 2 twr 3 tbw HB, LB twp WE tw th ATA IN twhz 4 tow ATA OUT PRELIMINARY (June, 2006, Version 0.0) 8 AMIC Technology, Corp.
10 Timing Waveforms (continued) Write Cycle 3 (Byte Enable Controlled) twc Address taw tcw tas 1 tbw 2 twr 3 HB, LB twp WE tw th ATA IN twhz 4 tow ATA OUT Notes: 1. tas is measured from the address valid to the beginning of Write. 2. A Write occurs during the overlap (twp, tbw) of a low, WE and ( HB and, or LB ). 3. twr is measured from the earliest of or WE or ( HB and, or LB ) going high to the end of the Write cycle. 4. OE level is high or low. 5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested. PRELIMINARY (June, 2006, Version 0.0) 9 AMIC Technology, Corp.
11 AC Test Conditions Input Pulse Levels 0.4V to 2.4V Input Rise And Fall Time 5 ns Input and Output Timing Reference Levels 1.5V Output Load See Figures 1 and 2 TTL TTL CL 30pF CL 5pF * Including scope and jig. * Including scope and jig. Figure 1. Output Load Figure 2. Output Load for tclz, tolz, tchz, tohz, twhz, and tow ata Retention Characteristics (TA = -40 C to 85 C) Symbol Parameter Min. Typ. Max. Unit Conditions VR VCC for ata Retention V VCC - 0.2V ICCR ata Retention Current µa VCC = 2.0V, VCC - 0.2V VIN 0V tcr Chip isable to ata Retention Time ns tr Operation Recovery Time trc - - ns tvr VCC Rising Time from ata Retention Voltage to Operating Voltage ms See Retention Waveform PRELIMINARY (June, 2006, Version 0.0) 10 AMIC Technology, Corp.
12 Low VCC ata Retention Waveform 2.7V ATA RETENTION MOE 2.7V VCC tcr VR 2.0V tvr tr VIH VR - 0.2V VIH Ordering Information Part No. Access Time (ns) Operating Current Max. (ma) Standby Current Max. (µa) Package LP62S16256GV-55LLIF LP62S16256GU-55LLIF LP62S16256GV-70LLIF LP62S16256GU-70LLIF L Pb-Free TSOP 48L Pb-Free CSP 44L Pb-Free TSOP 48L Pb-Free CSP PRELIMINARY (June, 2006, Version 0.0) 11 AMIC Technology, Corp.
13 Package Information TSOP 44L TYPE II Outline imensions unit: inches/mm E HE L L S B e y A1 A2 c A L L1 Symbol imension in inch imension in mm Min. Nom. Max. Min. Nom. Max. A A A B c E e HE L L S y θ Notes: 1. imension &E do not include interlead flash. 2. imension B does not include dambar protrusion/intrusion. 3. imension S includes end flash. PRELIMINARY (June, 2006, Version 0.0) 12 AMIC Technology, Corp.
14 Package Information 48L CSP ( 6 x 8 mm ) Outline imensions (48TFBGA) TOP VIEW BOTTOM VIEW unit: mm Ball#A1 CORNER 0.10 S C 0.25 S C A B Ball*A1 CORNER b (48X) A B C E F G H E E1 e A B C E F G H B e 1 SIE VIEW A // 0.25 C A C 0.20(4X) (0.36) C SEATING PLANE A1 A Symbol imensions in mm MIN. NOM. MAX. A A A E E e b Note: 1. THE BALL IAMETER, BALL PITCH, STAN-OFF & PACKAGE THICKNESS ARE IFFERENT FROM JEEC SPEC MO192 (LOW PROFILE BGA FAMILY). 2. PRIMARY ATUM C AN SEATING PLANE ARE EFINE BY THE SPHERICAL CROWNS OF THE SOLER BALLS. 3. IMENSION b IS MEASURE AT THE MAXIMUM. THERE SHALL BE A MINIMUM CLEARAN OF 0.25mm BETWEEN THE EGE OF THE SOLER BALL AN THE BOY EGE. 4. BALL PA OPENING OF SUBSTRATE IS Φ 0.3mm (SM) SUGGEST TO ESIGN THE PCB LAN SIZE AS Φ 0.3mm (NSM) PRELIMINARY (June, 2006, Version 0.0) 13 AMIC Technology, Corp.
Rev. No. History Issue Date Remark
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