e-nvm 2017 Leading-Edge Embedded NVM Workshop PROGRAMME September 25-27, 2017

Transcription

1 Leading-Edge Embedded NVM Workshop e-nvm 2017 STMicroelectronics Rousset September 25-27, 2017 Centre Microélectronique de Provence, Gardanne, Aix en Provence area (France) PROGRAMME

2 Programme Monday, September 25, :45am: Registration 9:15am: Workshop opening (Bernard POLI, ARCSIS and Philippe Lalevée, Ecole des Mines de Saint-Etienne - CMP) 9:30am: Keynote speaker, Betty Prince, Memory Strategies International, USA - «Embedded Non-Volatile Memories for Intelligent IoT» Session 1 - Embedded flash memories Technology: state of the art and trends - Part 1 Chairman: Didier Nee, WISeKey, France 10:15am: «TSMC envm Technology» Dan Kochpatcharin, TSMC (The Netherlands) 10:40am: Break 11:05am: «A new core transistor equipped with NVM functionality without using any emerging memory materials» Yasuhiro Taniguchi, Floadia (Japan) 11:30am: «Scaling and Demonstration of 28nm Logic-Process-Compatible Split-Gate Flash Memory Technology» Nhan Do, SST (USA) 11:55am: «A Highly Scalable Floating-Gate Cell for Embedded-Flash Applications» Weiran Kong, Huahong Grace Semiconductor (China) 12:20pm: Lunch Session 2 - Emerging and leading edge technologies for embedded NVM - Part 1 Chairman: David Naura, INVIA, France 2:00pm: «Embedded charge-trap non-volatile memory technologies at 40-nm node and beyond» Igor Kouznetsov, Cypress Spansion (USA) 2:25pm: «Non-Volatile Resistive Memory: a Started Revolution Towards the Memory of the Future» Gabriele Navarro, CEA- LETI, MINATEC Campus (France) 2:50pm: «Leading logic NVM technlogy advancing into 7NM finfet node: Challenges and Solutions» James Huang, ememory (Taiwan) 3:15pm: «Voltage Compatibility of ReRAM operation with CMOS» Dirk Wouters, RWTH Aachen University (Germany) 3:40pm: «FeFET - The ideal embedded NVM for the age of IoT» Stefan Müller, Ferroelectric Memory (Germany) 4:05pm: Break Session 3 - Device and architecture - Part 3 Chairman: Philippe Boivin, STMicroelectronics, France 4:30pm: «SMIC Advanced envm Solutions For Security IOT» Stephen Zhou, SMIC (China)

3 Programme 4:55pm: «Split-Gate Flash on 28-nm HKMG Logic Process For High- Speed Embedded Secure-Element Chip Applications» Yong Kyu Lee, Samsung Electronics (Korea) 5:20pm: «SE-RICH GESE-BASED OTS Selector Engineering Targeting High Density Crossbar Resistive Memory» Anthonin Verdy, CEA-Leti (France) 5:45pm: End of the conference day Tuesday, September 26, :45am: Registration Session 2 - Emerging and leading edge technologies for embedded NVM - Part 2 Chairman: David Naura, INVIA, France 9:00am: «Unleash new system architectures with Crossbar ReRAM for embedded applications and storage class memories» Sylvain Dubois, Crossbar (USA) 9:25am: «40nm embedded ReRAM platform in foundry with highly reliable TaOx cell technology» Takumi Mikawa, Panasonic (Japan) 9:50am: «High-performance and Low-power Operations with RRAMbased FPGAs» Pierre-Emmanuel Gaillardon, Utah University (USA) 10:15am: «High-speed voltage-control spintronics memory having high-efficiency of writting, a potential of unlimited endurance, and broad design windows» Hiroaki Yoda, Toshiba (Japan) 10:40am: Break Session 4 - Users, focus on connected objects, IoT Chairman: Philippe Boivin, STMicroelectronics, France 11:05am: «Emerging NVM technologies: toward mass production in MCU embedded market» Jérôme Azémar, Yole Developpement (France) 11:30am : «Inkjet - Printed Flexible Conductive Bridge RAM» Bernhard Huber, Munich University of Applied Sciences (Germany) / INRS-EMT (Canada) 11:55am : «NVM technologies: A hardware security point of view» Franck Courbon, University of Cambridge (U.K) 12:20pm : «Secure Characterisation of the OxRAM Technology» Alexis Krakovinsky, CEA & IM2NP (France) 12:45pm: Lunch / Poster session Session 3 - Device and architecture - Part 2 Chairman: Romain Wacquez, CEA-EMSE, France 2:00pm: «Multiscale Modeling of RRAM Devices for Memory and Neuromorphic Computing Applications» Luca Larcher, University of Modena and Reggio Emilia (Italy) 2:25pm: «Toward non-volatile digital flows» Virgile Javerliac, evaderis (France) 2:50pm: «Formal Design Space Exploration for Memristorbased Crossbar Architecture» Marcello Traiola, LIRMM/ University of Montpellier (France)

4 Programme 3:15pm: «Resistive switching in narrow gap Mott Insulators» Marie- Paule Besland, IMN Nantes (France) 3:40pm: Break Session 1 - Embedded flash memories Technology: state of the art and trends - Part 2 Chairman: Didier Nee, WISeKey, France 4:05pm: «High and medium voltage devices integration on advanced envm» Dann Morillon, STMicrolectronics (France) 4:30pm: «Ultra Low Power single poly non volatile memory for passive RFID applications» Terry Lin, ememory (Taiwan) 4:55pm: «Anti-Fuse, OTP NVM, the Only Memory Enabled at Every CMOS Process Node to 10nm Providing Code, Encryption Keys, & Confidential Data Storages» Paolo Piacentini, Kilopass (USA) 5:20pm: «FinFET Split-Gate MONOS for Embedded Flash in 16/14nmnode and beyond» Tomohiro Yamashita, Renesas Electronics (Japan) 5:45pm: End of the conference day 2 8:30pm: Conference dinner Wednesday, September 27, :45am: Registration Session 2 - Emerging and leading edge technologies for embedded NVM - Part 3 Chairman: Romain Wacquez, CEA-EMSE, France 9:00am: «ESF3 Memory: Endurance Capability and Post-Cycling Data Retention» Viktor Markov, STT (USA) 9:25am: «Overview of Conductive Bridging RAM (CBRAM): an ideal NVM for IoT Applications» - Philippe Blanchard, Adesto Technologies (USA) 9:50am: «Spin Orbit Torque MRAM-based circuits for non-volatile logic and memories» - Gregory Di Pendina, University of Grenoble Alpes/CNRS/CEA, INAC - SpintecLab (France) 10:15am: «From material to circuit : lead the embedded NVM to the next stage» - Vincenzo Della Marca, IM2NP (France) 10:40am: Break Session 3 - Device and architecture - Part 3 Chairman : Philippe Boivin, STMicroelectronics, France 11:05am: «Innovative design solutions for emerging NVM technologies» - Gabriele Navarro, CEA-Leti (France) 11:30am: «Unconventional uses of embedded non-volatile memory: toward the natively intelligent memory» - Damien Querlioz, Paris-Sud University (France) 11:55am: «NVM chip for Machine Learning Operations» - Dimitrios Rodopoulos, IMEC (Belgium) 12:20pm: Lunch, end of the conference 2:00pm: End of the Conference

5 Posters «Resistive Non Volatile Memories Characterization by Conductive Atomic Force Microscopy in Ultra High Vacuum» A.K. Singh 1, 2, 3, 4, S. Blonkowski1, and M. Kogelschatz2, 4 1 STMicroelectronics, Crolles (France), 2Laboratoire des Technologies de la Microélectronique (LTM), CNRS & UGA, Grenoble (France), 3CEA-Leti Grenoble (France), 4Université Grenoble Alpes (UGA), Grenoble (France). «Characterizing embedded device security from the hardware» Dr. Franck Courbon, Computer Laboratory, University of Cambridge (United Kingdom)

6 Exhibitors Floadia ememory Technology Inc. Floadia Corporation , Ogawa-Higashi, Kodaira-City, Tokyo, JAPAN Contact name: Shusaku MIYABE Tel: ememory Technology Inc. 8F, No.5, Tai-Yuan 1st St., Jhubei City, Hsinchu County 30288, TAIWAN Contact name: Viola SUNG Tel: Fax:

7 Exhibitors Kilopass Technology SST (Silicon Storage Technology) Kilopass Technology Inc Zanker Road San Jose, CA UNITED STATES Contact name: Jonah MCLEOD Phone: Mobile: SST Ltd 720 Wharfedale Road Winnersh, RG41 5TP UNITED KINGDOM Contact name: Chris BROWN Phone:

8 Organized by: In partnership with: Supported by: Organizing Committee: Bernard Poli, Director - ARCSIS Corinne Joachin, Event Manager - ARCSIS Séverine Lémeri, Event Assistant - ARCSIS +33 (0) contact@e-nvm.org website: