Verigy V93000 HSM HSM3G

Transcription

1 Verigy V93000 HSM HSM3G Prduct Overview Industry Challenges High-end wrkstatin, desktp and laptp PCs, cmputer servers, perfrmance graphics cards, dynamic game cnsles, high-end vide/hdtv, cmputer netwrking and a variety f cnsumer electrnics all depend n perfrmanceriented Dynamic RAM (DRAM) memry types DDR3, GDDR5 and XDR t deliver the latest perfrmance and functinality ver a range f selling prices. The accelerating rate f technlgical advancement f these market leading electrnics drives an increasingly cmplex set f cst, perfrmance, pwer and bandwidth requirements. As a fundamental cmpnent, Dynamic RAM memry technlgies must cntinuusly evlve t match applicatin demands by prviding increased data transfer rates (dubling every three t fur years) and lwer csts per bit. Ecnmical at-speed mass prductin test slutin fr DDR3, DDR4 and beynd with 10-year system lifetime fr multiple device generatins Increasing memry data transfer rates have frced cnstant prductin prcess gemetry shrinks, which cause new failure mechanisms that require thrugh 1

2 at-speed test f the memry I/O and the memry cre. Further, in rder t enable data rates in the multi-gigabit per secnd range, memry devices have been adpting advanced architectural features frm SOC devices, such as frwarded clck architectures and extensive device trainings. These I/O-features raise test requirements that are well knwn in the high-speed SOC test arena, but are new t cnventinal memry test systems. Requirements typical fr memry test, such as massive multi-site implementatins, remain present fr highspeed memry devices. The cmbinatin f higher test speeds, grwing feature-set requirements and the persistent pressure n lwering test csts results in significant challenges fr memry ATE. This traditinally has frced DRAM manufacturers t purchase a new test system fr every new generatin f memry technlgy, i.e. every 3-4 years. Memry manufacturers seek an ATE slutin that delivers the perfrmance, functinality and ecnmical requirements f testing highspeed memries - ffering best lifetime value and investment prtectin beynd a single memry device generatin. Prduct Summary Ecnmical at-speed mass prductin test slutin fr DDR3, DDR4 and beynd with 10-year system lifetime fr multiple device generatins The Verigy V93000 HSM3G is the nly test slutin available tday fr lw-cst vlume prductin f DDR3, DDR4 and beynd. HSM3G ffers highly accurate at-speed testing and is scalable t 2.9Gbps. HSM3G Memry Test Card A multi-generatin grwth path via ecnmical upgrades up t 6.8Gbps date rate prvides a unique lifetime value and utstanding return f investment. Lwest cst f test fr mainstream DDR3 & DDR4 up t 2.9Gbps HSM3G prvides highly accurate at-speed I/O and at-speed cre access test scalable up t 2.9Gbps, cvering the entire DDR3 generatin and at least the first tw future mainstream speed bins that are expected fr DDR4, which are Gbps and Gbps. HSM3G achieves native 2.9Gbps data rate, withut pin-muxing r duble clcking, which guarantees true 256-sites parallel test ver the entire speed range withut test-time penalties and withut cmprmises t accuracy, functinality, test cverage r yield. Due t its inherently superir memry ATE per-pin thrughput, the V93000 HSM3G prvides test-time savings f up t 20 percent. It delivers fully parallel pattern executin, as well as fully parallel DC tests and eye-width measurements, which enables the industry s best multi-site efficiency. Cmbined with a cmpetitive price pint, the V93000 HSM3G test system prvides lwest cst f test fr the targeted DRAM speed classes. Multi-generatin test platfrm with 10 year lifetime via ecnmical upgrades A unique benefit f the V93000 HSM3G is its future-ready upgradeability t HSM4000 and HSM6800, which gives access t data rates even beynd thse f the DDR3/4 generatin, featuring investment prtectin fr DDR3, DDR4 and future mainstream DRAM technlgies. This ensures mre than 10 years f cutting-edge lifetime value ver at least three mainstream DRAM device generatins and unmatched lng-term test ecnmics fr utstanding return n investment. The V93000 HSM platfrm is future-ready in terms f speed and functinality, ffering the mst cmplete feature-set available n the high-speed memry test market. Its prgrammable at-speed APG per-pin with supprt fr data bus inversin (DBI) and 2

3 cyclic redundancy check (CRC) data generatin enables t test the advanced memry technlgy features, ensuring best test quality and yield even fr the future DDR4 main memry standard. Integrated test-cell maximizes prductivity fr engineering, design verificatin & characterizatin. Due t the scalability f the V93000 HSM platfrm, the new generatin V93000 HSM memry test cards, HSM6800, HSM4000 and HSM3G, are plug-and-play extensins and can be easily cmbined with already available memry test cards, such as HSM3600 and HSM HX. The ability t upgrade existing engineering test systems with latest generatin highspeed technlgy prvides flexible access t higher perfrmance and enhanced highspeed test functinality at lwest capital spending. Best in industry high-speed perfrmance scalable up t 12.8Gbps with the market prven HSM HX HSM Manufacturing Test Cell The V93000 HSM Series cmes with an integrated vlume manufacturing test-cell, which ensures reliable peratin and high uptime as well as efficient ne-persn peratin, cmprising tester-t-handler dcking, test fixture exchange and test fixture buffer strage within the test-cell fr maximized prductivity. Optimized tester-t-handler dcking repeatability Flexible flr-plan layut ptins with small ftprint Lwest handler index time and cycle time verhead fr highest thrughput efficiency Easy t expand capabilities with new generatin memry test cards retaining full cmpatibility Cmpact Test Head, fully cmpatible t HVM: same hardware, same sftware, same DUT bards, same ability t use future platfrm enhancements Easy test prgram transfer and crrelatin frm engineering t prductin Unique Flexibility, addressing DDR3/4, GDDR5 and XDR within ne system Best engineering tl-set: Jitter Injectin & Measurement, Pattern cntrlled DC test, Bitmap, Timing Diagram, Real-time Surce- Synchrnus, Signal Equalizatin (and mre) Best temperature accuracy f +/- 1.5 C r better fr best prductin yields Characterizatin up t 12.8Gbps with best engineering tl-set Prven in R&D & validatin labs wrldwide, the V93000 HSM Series prvides the industry s mst advanced high-speed memry test capabilities in a cst-effective, small ftprint tester, making it a perfect fit 3

4 Features and Benefits FEATURE True 2.9Gbps APG and I/O Data Rate n 256-sites DDR3 at single pass BENEFIT Addresses within ne system: all mainstream DDR3 speed bins AND high-end Gamer DDR3 AND first tw mainstream DDR4 vlume bins Avids duble clcking r pin muxing fr best thrughput, test cverage and yield Three perfrmance ptins available via flexible license upgrade: 2.3Gbps 2.5Gbps Flexibility and scalability in perfrmance and cst, tailr-made t meet test requirements. Attractive entry price and lw upgrade cst 2.9Gbps Upgradeable t HSM4000 and HSM6800 via ASIC exchange (upgrade f key speed-binned test-prcessr cmpnents) Unique 10-year lifetime thrugh cst efficient upgrades cvering three device generatins, DDR3, DDR4 and future mainstream technlgies. Memry ATE per pin Per pin APG Per pin pattern memry Per pin PMU Simultaneus Bi-directinal (SBD) Unique 10-year lifetime thrugh cst efficient upgrades cvering three device generatins, DDR3, DDR4 and future mainstream technlgies. Safest investment: directly upgradable t 6.8Gbps tday Fully parallel pattern executin, DC tests and eye-width measurements with best multi-site efficiency. Up t 20% thrughput advantage resulting in lwest cst-f-test At-speed test f I/O pins n a single transmissin line withut data bus cllisins. Full at-speed test cverage, shrtest testtimes (n padding), lwest cst-f test. Prgrammable at-speed APG per-pin CRC Data Generatin ABI / DBI Supprt Enables mst cmplex memry test patterns fr any fault algrithm t ensure required test quality and fast yield learning Ready t test advanced I/O capabilities f current and next generatin memry architectures 4

5 Key Specificatins SPECIFICATION Maximum Test Speed: VALUE 2.3/2.5/2.9Gbps (ptins) Example parallelism: 64-sites GDDR5 256-sites DDR3 Special Functins: Simultaneus Bi-directinal (SBD) Real-Time Strbe Adaptatin Embedded Search Supprt Prgrammable Signal Equalizatin Jitter Injectin & Measurement CRC Data Generatin ABI / DBI Supprt V93000HSM System Cmpnents / Optins System Infrastructure: V93000 Infrastructure Test-Head Optins: V93000 Large (64-slt) Test Head V93000 Cmpact (16-slt) Test Head Memry Test Cards: HSM6800 HSM4000 HSM3G High-Speed Extensin Card: HSM HX Device Pwer Supplies: DC Scale DPS32 and MS-DPS cards System Cntrller: High Perfrmance HP-LX Wrkstatin Sftware: HSM Memry Test Sftware Bundle 5

6 Related Infrmatin Fr mre infrmatin abut the V93000 HSM6800, please visit the fllwing website: Cntact Infrmatin Fr mre infrmatin abut the V93000 Direct-Prbe Slutin, please cntact yur lcal Verigy sales representative. This infrmatin is subject t change withut ntice. Verigy Ltd July EN 6