AltaSens A5262-4T 4.5 Megapixel CMOS Image Sensor 0.18 µm IBM Process
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1 AltaSens A5262-4T 4.5 Megapixel CMOS Image Sensor 0.18 µm IBM Process Imager Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor technology, please call Sales at Chipworks Richmond Road, Suite 500, Ottawa, ON K2H 5B7, Canada Tel: Fax:
2 Imager Process Review Table of Contents 1 Overview 1.1 List of Figures 1.2 List of Tables 1.3 Company Profile 1.4 Introduction 1.5 Device Summary 1.6 Process Summary 2 Package and Die 2.1 Package 2.2 Die 2.3 Die Features 3 Process 3.1 General Structure 3.2 Organic Layers 3.3 Bond Pads 3.4 Dielectrics 3.5 Metals 3.6 Vias and Contacts 3.7 Peripheral Transistors and Poly 3.8 MIM Capacitors 3.9 Isolation 3.10 Wells, Epi, and Substrate 4 Pixel Array Analysis 4.1 Pixel Schematic 4.2 Pixel Array Plan View Analysis 4.3 Pixel Array Cross-Sectional Analysis 5 Memory Cell Analysis 5.1 Multi-Port SRAM Overview 5.2 Multi-Port SRAM Plan View Analysis 6 Critical Dimensions 6.1 Package and Die 6.2 Vertical Dimensions 6.3 Horizontal Dimensions
3 Imager Process Review 7 References 8 Statement of Measurement Uncertainty and Scope Variation Report Evaluation
4 Overview Overview 1.1 List of Figures 2 Package and Die Hitachi DZ-BD7H HD Camcorder Identification Markings of Hitachi DZ-BD7H HD Camcorder Hitachi DZ-BD7H HD Camcorder Side View Hitachi DZ-BD7H HD Camcorder Front View Inside of Hitachi DZ-BD7H HD Camcorder A5262-4T Image Sensor and Lens Assembly Extracted from the Hitachi DZ-BD7H A5262-4T Package on PCB Top View A5262-4T Package on PCB X-Ray A5262-4T Package on PCB with Copper Plate Intact Bottom View A5262-4T Package on PCB With Copper Plate Removed Bottom View A5262-4T Package on PCB X-Ray Top View Die Photograph Intact Die Photograph Decapsulated Die Markings Die Markings A5262-4T Metal 1 Die Photograph Annotated Die Photograph Die Corner A Die Corner B Die Corner C Die Corner D Die Edge A Die Edge B Die Edge C Die Edge D Minimum Pitch Bond Pads Minimum Pitch Bond Pads Detail Pixel Array Corner A Pixel Array Corner B Pixel Array Corner C Pixel Array Corner D SRAM Block
5 Overview Process Array General Structure Peripheral General Structure Die Edge and Die Seal Die Seal and Organic Layer Edge Blue Filter Edge Organic Lens Boundary Bond Pad Right Bond Pad Edge Left Bond Pad Edge Left Bond Pad Edge Detail Passivation ILD ILD PMD PMD 1 and Pixel AR Layer Minimum Peripheral Metal Minimum Pitch Metal Minimum Metal Metal 2 TEM Minimum Metal Metal 1 TEM Minimum Pitch Via 3s Minimum Pitch Via 2s Minimum Pitch Via 1s Minimum Pitch Contacts to Poly Contact to Poly TEM Minimum Pitch Contacts to Substrate Peripheral NMOS Glass Etch Peripheral NMOS Si Etch Peripheral PMOS Si Etch MIM Capacitor MIM Capacitor in Detail Contact to Lower Plate MIM Capacitor in Detail Contact to Upper Plate Minimum Width STI in Periphery Poly Over STI TEM Minimum Width STI in Pixel Area Peripheral P-Wells at the Die Edge Peripheral P-Wells and N-Wells SCM Peripheral Wells at Die Edge SCM Peripheral Wells at Die Edge Detail SCM Peripheral Wells Detail SRP Periphery P-Well SRP in Periphery Shallow N-Well SRP in Pixel Array
6 Overview Pixel Array Analysis Pixel Schematic Circuit Pixel Array Corner Optical Pixel Array Lenses Pixel Array Lenses Tilt View Pixel Array at Metal Pixel Array at Metal Pixel Array at Metal 2 Detail Pixel Array at Via Pixel Array at Metal Pixel Array at Poly Pixel Array at Poly Detail Pixel Array at Substrate Pixel Array at Substrate SCM Pixel Array at Substrate Detail SCM Pixel at Poly Showing Cross-Sectional Planes Plan View Pixel Array General Structure (S1 Blue-Green Filters) Pixel Array General Structure (S1 Red-Green Filters) Pixel Array Right Edge (S1) Pixel Array Bottom Edge (S2) Lenses and Green Color Filters (S2) TEM Lenses and Red Color Filters (S2) TEM Blue Color Filters (S2) TEM Blue and Green Color Filter Edge (S2) TEM General Structure T1 and T4 Transfer Transistors (S2) General Structure T2 and T3 Transfer Transistors (S2) T2/T3 Transfer Transistors (S2) TEM General Structure T5 Transistor (S1) General Structure T6 and T7 Transistors (S1) T1 Transfer Transistor (S2) Glass Etch T1 Transfer Transistor (S2) Silicon Etch T2 Transfer Transistor (S2) Silicon Etch T3 Transfer Transistor (S2) Silicon Etch T4 Transfer Transistor (S2) Silicon Etch Transfer Transistor and FD Contact TEM Transfer Transistor in Detail TEM Right Edge of Transfer Transistor TEM TEM Transfer Transistor Gate Oxide TEM SCM Pixel Through Transfer Transistors (S2) SCM Pixel Through Transfer Transistors (S2) Detail
7 Overview Reset Transistor T5 (S1) Source Follower Transistor T6 (S1) Row Select Transistor T7 (S1) Reset Transistor T5 Width (S2) Source Follower Transistor T6 Width (S2) Row Select Transistor T7 Width (S2) 5 Memory Cell Analysis Single Multi-Port SRAM Sub-Block Multi-Port SRAM Metal Multi-Port SRAM Poly Multi-Port SRAM in Detail Poly SRAM Transistor Width TEM SRAM Transistor Gate Oxide ROM Block ROM Poly
8 Overview List of Tables 1 Overview Device Identification Device Summary Summary of Major Findings 2 Package and Die Functional Block Sizes Die and Bond Pad Dimensions 3 Process Dielectric Composition and Thicknesses Metallization Composition and Thicknesses Minimum Metals Horizontal Dimensions Via and Contact Horizontal Dimensions Transistor and Polysilicon Horizontal Dimensions Transistor and Polysilicon Vertical Dimensions Isolation Horizontal Dimensions Wells and Epi Vertical Dimensions 4 Pixel Array Analysis Pixel Horizontal Dimensions Pixel Vertical Dimensions Transistor Dimensions in Pixel Array 6 Critical Dimensions Die and Bond Pad Dimensions Dielectric Composition and Thicknesses Metallization Composition and Thicknesses Transistor and Polysilicon Vertical Dimensions Wells and Epi Vertical Dimensions Pixel Vertical Dimensions Minimum Metals Peripheral Horizontal Dimensions Minimum Metals Pixel Array Horizontal Dimensions Via and Contact Horizontal Dimensions Transistor and Polysilicon Horizontal Dimensions Isolation Horizontal Dimension Pixel Horizontal Dimensions Transistor Dimensions in Pixel Array
9 About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems. The company s ability to analyze the circuitry and physical composition of these systems makes them a key partner in the success of the world s largest semiconductor and microelectronics companies. Intellectual property groups and their legal counsel trust Chipworks for success in patent licensing and litigation earning hundreds of millions of dollars in patent licenses, and saving as much in royalty payments. Research & Development and Product Management rely on Chipworks for success in new product design and launch, saving hundreds of millions of dollars in design, and earning even more through superior product design and faster launches. Contact Chipworks To find out more information on this report, or any other reports in our library, please contact Chipworks at: Chipworks 3685 Richmond Rd. Suite 500 Ottawa, Ontario K2H 5B7 Canada T: F: Web site: info@chipworks.com Please send any feedback to feedback@chipworks.com
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