Panasonic Mp, 4.4 µm Pixel Size LiveMOS Image Sensor from Panasonic LUMIX DMC-G1 Micro Four Thirds Digital Interchangeable Lens Camera

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1 Panasonic Mp, 4.4 µm Pixel Size LiveMOS Image Sensor from Panasonic LUMIX DMC-G1 Micro Four Thirds Digital Interchangeable Lens Camera For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor and electronics technology, please call Sales at Chipworks Richmond Road, Suite 500, Ottawa, ON K2H 5B7, Canada Tel: Fax:

2 Some of the information is this report may be covered by patents, mask and/or copyright protection. This report should not be taken as an inducement to infringe on these rights Chipworks Inc. This report is provided exclusively for the use of the purchasing organization. It can be freely copied and distributed within the purchasing organization, conditional upon the accompanying Chipworks accreditation remaining attached. Distribution of the entire report outside of the purchasing organization is strictly forbidden. The use of portions of the document for the support of the purchasing organization s corporate interest (e.g., licensing or marketing activities) is permitted, as defined by the fair use provisions of the copyright act. Accreditation to Chipworks must be attached to any portion of the reproduced information. IPR JMRF Revision 1.0 Published: December 19, 2008

3 Table of Contents 1 Overview 1.1 List of Figures 1.2 List of Tables 1.3 Company Profile 1.4 Introduction 1.5 Device Summary 1.6 Process Summary 2 Device Overview 2.1 Downstream Product, Package, and Die 2.2 Die Features 3 Process Analysis 3.1 General Structure 3.2 Bond Pads 3.3 Dielectrics 3.4 Metallization 3.5 Vias and Contacts 3.6 Peripheral MOS Transistors and Poly 3.7 Isolation 3.8 Wells and Substrate 4 Pixel Analysis 4.1 Pixel Overview and Schematic 4.2 Pixel Plan-View Analysis 4.3 Pixel Cross-Sectional Analysis Parallel to Column Out Line 4.4 Pixel Cross-Sectional Analysis Parallel to Row Select and Transfer Lines 4.5 Supplemental Dark Pixel Analysis 5 Critical Dimensions 5.1 Die, Bond Pad, and Standard Cell Dimensions 5.2 Dielectric Thicknesses 5.3 Metallization Critical Dimensions 5.4 Via and Contact Dimensions 5.5 MOS Transistor and Poly Dimensions 5.6 STI Dimensions 5.7 Well and Substrate Dimensions 5.8 Pixel Array Dimensions

4 6 References 7 Statement of Measurement Uncertainty and Scope Variation Report Evaluation

5 Overview Overview 1.1 List of Figures 2 Device Overview Panasonic LUMIX DMC-G1 Camera Front Panasonic LUMIX DMC-G1 Camera Bottom Panasonic LUMIX DMC-G1 Camera Main Board Front Panasonic LUMIX DMC-G1 Camera Main Board Back Imager Assembly AD9990 Image Processors AD9990 Functional Block Diagram Imager Assembly Front Imager Assembly Front (Shield and Filter Removed) LiveMOS Imager Die Imager Assembly Back Die Edge Gold Stud and Cable Attach Resin Tilt View Gold Stud Tilt View Bond Pad Die Photograph Die Markings Analysis Sites NAND Cell Footprint Minimum Gate Length NMOS and PMOS 3 Process Analysis Die Thickness Die Edge Die Seal Bond Pad Overview Edge of Bond Pad Passivation TEM of Passivation and IMD IMD PMD Minimum Pitch Metal TEM of Metal Minimum Pitch Metal 1 Periphery Minimum Pitch Metal 1 Pixel Array TEM of Metal Minimum Pitch Vias Contacts to Poly TEM of Contact to Poly Interface Minimum Pitch Contacts to Diffusion TEM of Contact to Diffusion TEM of Contact to Diffusion Interface

6 Overview Contacted Logic Gate Pitch Minimum Width Routing Poly TEM of Peripheral MOS Transistor Overview TEM of Peripheral MOS Transistor SWS TEM of Peripheral MOS Transistor Gate Oxide Minimum Width STI Poly Over STI TEM of STI SCM of N-Epi and P-Well SCM of Peripheral N and P-Wells SRP of Pixel Array SRP of N-Epi and Substrate 4 Pixel Analysis Shared Pixel Schematic Microlenses Tilt View of Microlenses Color Filters Pixel at Metal Pixel at Metal Pixel at Poly Pixel at Diffusion Planar SCM of N-Photocathode Pixel Planes of Cross-Sectioning Pixel Overview (Section A) Red and Green Color Filters TEM of Green Color Filter TEM of Blue Color Filter Pixel AR Layer and Silicide Exclusion Mask (Section A) TEM of Pixel AR Layer Transfer Gate (T2) Overview (Section B) SCM of Transfer Gate and P-Pinning Layer (Section B) SCM of N-Photocathode Thickness (Section A) V SS Line and Readout Transistor Overview (Section C) Reset Transistor (T3) Gate Length (Section C) Source Follower Transistor (T4) Gate Length (Section C) Row Select Transistor (T5) Gate Length (Section C) Pixels at Array Center Zero Metal 2 Aperture Shift (Section A) Pixels Near Top Edge of Array Slight Metal 2 Aperture Shift (Section A) Dark Pixel/Active Pixel Transition (Section D) Pixels at Array Center (Section D) TEM of Transfer Gate and Floating Diffusion Contact TEM of Transfer Gate Width Transfer Gate Oxide Thickness

7 Overview TEM of Reset or Source Follower Transistor Gate Width Dark Pixels at Metal Dark Pixels at Poly Dark Pixel Overview (Section A) Dark Pixel Detail (Section A) 1.2 List of Tables 1 Overview Device Identification Device Summary Process Summary 2 Device Overview Die, Bond Pad, and Standard Cell Dimensions 3 Process Analysis Measured Dielectric Thicknesses Metallization Thicknesses Metallization Width and Pitch Via and Contact Dimensions Peripheral MOS Transistor and Poly Dimensions Isolation Critical Dimensions Well Depths and Die Thicknesses 4 Pixel Analysis Pixel Horizontal Dimensions Pixel Vertical Dimensions Transistor Dimensions Lens, Filter, and Spacer Compositions 5 Critical Dimensions Die, Bond Pad, and Standard Cell Dimensions Measured Dielectric Thicknesses Metallization Thicknesses Metallization Width and Pitch Via and Contact Dimensions Peripheral MOS Transistor and Poly Dimensions Isolation Critical Dimensions Well Depths and Die Thicknesses Pixel Horizontal Dimensions Pixel Vertical Dimensions Transistor Dimensions