ULTRA-THIN DOUBLE LAYER METROLOGY WITH HIGH LATERAL RESOLUTION. Semicon West 2018, Bernd Srocka

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1 ULTRA-THIN DOUBLE LAYER METROLOGY WITH HIGH LATERAL RESOLUTION Semicon West 2018, Bernd Srocka

Mission Unity-SC provides a wide range of Solutions in Metrology& inspection to the Semiconductor Industry, From front-end to advance packaging, TSV, MEMS, WLP

control Power device manufacturing MEMS, LED s, & substrate manufacturing Wafer manufacturing FOGALE NANOTECH SEMICONDUCTOR BU 1 ST DELIVERY FULLY AUTOMATED TOOL

2 Mission Unity-SC provides a wide range of Solutions in Metrology& inspection to the Semiconductor Industry, From front-end to advance packaging, TSV, MEMS, WLP addressing communication, Automotive and Memory Markets Main Applications Advanced Packaging & Wafer Level Packaging CMP (chemical mechanical polishing) process control Power device manufacturing MEMS, LED s, & substrate manufacturing Wafer manufacturing FOGALE NANOTECH SEMICONDUCTOR BU 1 ST DELIVERY FULLY AUTOMATED TOOL 200/300mm M&A Creation of M&A Jan ST DELIVERY FULLY AUTOMATED AOI TOOL 200/300mm Start FDSOI Project Semicon West, July

3 Worldwide Technical & Services Support USA East & West Cost Sales & Technical Support Europe Germany France KOREA Japan CHINA TAIWAN Singapore Malaysia Thailand Philippines Semicon West, July

ODIN: High resolution for standard applications with

defect detection 4SEE 2D/3D CCS: strong topography

metrology 4SEE EyeEdge: special wafers edge inspection

High resolution + review + metrology WOTAN: Fast Macro

surface inspection THOR: all zone Edge insp.

4 ODIN: High resolution for standard applications with in-build review & metrology WOTAN: Fast dual side Macro defect detection 4SEE 2D/3D CCS: strong topography surface inspection THOR: Standard edge inspection and metrology 4SEE EyeEdge: special wafers edge inspection (thin, taiko, bonded wafers, glass carriers, ) ODIN: High resolution + review + metrology WOTAN: Fast Macro defect detection 4See 2D/3D CCS: strong topography surface inspection THOR: all zone Edge insp. & EBR-metrology 4SEE EyeEdge: special wafer edge insp. Semicon West, July

and opaque substrates PSD: full surface acquisition with a nm height

5 DarkView: fast Front and Back side dark field inspection for opaque wafers LightSpeed: high sensitivity front side dark field inspection for transparent and opaque substrates PSD: full surface acquisition with a nm height sensitivity: slip line, grinding inspection DarkView LightSpeed PSD Semicon West, July

scale BALDUR: thin film thickness measurement at 0.

6 TMAP: thickness and topography control from tens of nm to mm NST: Nanoscale topography at high resolution, down to angstrom scale BALDUR: thin film thickness measurement at 0.5 A resolution, application on FD-SOI TMAP NST BALDUR Semicon West, July

7 FD-SOI = fully depleted silicon on insulator ClassicalPlanar FET Fin-FET FD-SOI FET Smart Cut TM Source: Soitec low energy fast simpler technology dynamically tuneability: Power vs. Performance Semicon West, July

8 DreamChip Mobileye Renesas Semicon West, July 2018 NXP Samsung GF ST Sony Semicon West, July

9 Si-layer: 12 nm Oxide-layer: 25 nm Si-layer: thickness homogeneity required ±0.5 nm over full wafer ±5 mm over 3,000 km ~ London-Moscow Source: Soitec Semicon West, July

Actual Si top uniformity spec: ±5Å, wafer to wafer, all points, all spatial wavelengths across wafer Ellipsometry Metrology gap DRM AFM Limited by

10 Actual Si top uniformity spec: ±5Å, wafer to wafer, all points, all spatial wavelengths across wafer Ellipsometry Metrology gap DRM AFM Limited by thickness value & homogeneity: fully depleted working principle low voltage operation dynamic tuneability Source: Soitec Semicon West, July

11 BALDUR DRM Automated Metrology FD-SOI / layer thickness Metrology today Si thickness BOX thickness Semicon West, July

Select appropriate wavelength blue green

Reflected Intensity translates into layer

12 Select appropriate wavelength blue green red total reflection Si influence onto reflection Oxide influence onto reflection Calibration against Ellipsometry Rang e Reflected Intensity translates into layer thickness Source: ST/Soitec Semicon West, July

13 Higher resolution translates into detailled tickness signatures that might be of importance for the application. For exemple edge marks and ripples in the wafer shown here. J.Auerhammer et al, IEEE S3S Conf. 2016, San Francisco Semicon West, July

14 based on approved BALDUR DRM - Phase I (single-film) platform to exceed Phase I limitations like e.g. only one film measurable at a time neglecting variations from second film (SiO 2 ) each film stack needs its own special wavelength filter limited accuracy and speed (for high production sampling rates) derivation of reflection to layer thickness [1/nm] PHASE 1 Single wavelength wavelength [nm] PHASE 2 Double wavelength (simultaneously) derivation of reflection to layer thickness [1/nm] wavelength [nm] Semicon West, July

02 300 350 400 450 500 550 600 650 700 wavelength [nm] a calibration plane

15 PHASE 2 Double wavelength (simultaneously) derivation of reflection to layer thickness [1/nm] wavelength [nm] a calibration plane for each film thickness results from two films simultaneously Semicon West, July

16 thickness t 2 [nm] reflectivity curves figured as plane R k (t 1, t 2,λ k ) derivation of reflection to layer thickness [1/nm] wavelength [nm] time is wavelength 470,680 thickness t 1 [nm] Semicon West, July

17 CURRENT STATUS -THICKNESS WAFER MAP (SI & SIO 2 ) Si thickness (scale range: 0.6 nm, nm) BOX thickness (scale range: 0.6 nm, ,45nm) Residual tool originated pattern on Si: ~0.05 Å Residual tool originated pattern on SiO2: ~0.06 Å Semicon West, July

18 Unity SC Organization Structure KAITMAPR2018 no cross correlation pattern between both layers Semicon West, July

Differential Reflective Microscopy (DRM) was developed to monitor FD-SOI layer (Si and BOX): Micro local & global thickness variation metrology

eligible lateral resolution from ~2µm to 10000µm equally allows transistor or die performance monitoring fully automated system low contact

19 Differential Reflective Microscopy (DRM) was developed to monitor FD-SOI layer (Si and BOX): Micro local & global thickness variation metrology performance of dual-film: thickness resolution: 0.1Å thickness 10-25nm) accuracy thickness to reference :. repeatability thickness / homogeneity :. /. eligible lateral resolution from ~2µm to 10000µm equally allows transistor or die performance monitoring fully automated system low contact handling High throughput: 45 full wafer@20µm resolution 50 wph with e.g. 21 locations & high (2x2 µm 2 ) resolution improved user interface with new metrology & statistical functions for advanced manufacturing control and quality monitoring Power spectral density analysis Percentage of usable area Cumulative histogram Film defect analysis 1,408mm x 1,056mm Source: ST/Soitec FD-SOI Top Layer Semicon West, July

20 BALDUR - APPLICATION TO PHOTONICS PRODUCT Accuracy vs. Ellipsometry SOI/BOX stacks different to FDSOI can be measured by BALDUR BALDUR: Si mean thickness (TSi) within image 2.7 x 2.7mm² (5x magnification) Å Ellipsometer: TSi mean of 16 sites matrix 2,7x2.7mm² Semicon West, July

21 BALDUR - APPLICATION TO PHOTONICS PRODUCT Full wafer area can be monitored. High throughput is enabled in Phase 2 Semicon West, July

Bernd Srocka, PhD VP Engineering - Unity SC Phone: +49 351 20758

22 Bernd Srocka, PhD VP Engineering - Unity SC Phone: bernd.srocka@unity-sc.com (B.Srocka@HSEB-Dresden.de) 22

Soitec ultra-thin SOI substrates enabling FD-SOI technology. July, 2015

Soitec ultra-thin SOI substrates enabling FD-SOI technology July, 2015 Agenda FD-SOI: Background & Value Proposition C1- Restricted July 8, 2015 2 Today Ultra-mobile & Connected Consumer At Any Time With