Paradigms Shifts in CMP
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1 Paradigms Shifts in CMP Daniel Redfield Director - NMA CMPUG - Semicon West 2018
2 Paradigm Shifts in CMP State of CMP Market Inflections are driving CMP Growth and Complexity Paradigm Shifts in CMP Strategies to address CMP Complexity SMART CMP Tailored CMP Pads 2
3 3 CMPUG Semicon West 2018
4 4 CMPUG Semicon West 2018
5 CMP Enabled Inflections LOGIC NAND ADVANCED PACKAGING Relative No of CMP Passes Relative No of CMP Passes D NAND Gen 1 3D NAND Gen D NAND Gen 3 2.5D Si INTERPOSER 3D DRAM 3D Transistor: FinFET Co contact & local interconnect 3D Multi Patterning SA Gate Contact Large Die Form Factors 3D NAND More W & oxide CMP CMOS Under Array Stacked Cells Multi-Material Polish Wafer Level Packaging Image Sensors Redistribution Layer (RDL) Through Silicon Via (TSV) GPU 5
6 6 CMPUG Semicon West 2018
7 How will we use AI enabled SMART CMP? 7 CMPUG Semicon West 2018
8 Hardware Materials Endpoint Pressure/Velocity Slurry Pad Polymer Pore Groove Chemistry Delivery Temp. Control Conditioner Retaining Ring CMP Input Parameters. 8
9 Open Loop CMP Input Output Static Process Recipe Stability achieved through reduced Input Parameter variability. 9
10 Process Controlled CMP Property Input Change Output Dynamic Process Control Input Output Static Process Recipe Performance improved through Dynamic Process Control of Input Parameters. 10
11 AI Augmented Process Controlled CMP Property Input Change Output Dynamic Process Control (Property + AI) Input Output AI has the promise of optimizing output through the interpolation of multiple Input Parameters. 11
12 Warning with regards to AI Processing Output success is a function of algorithm training. 12
13 CMP Process Optimization Die Layout Layout Opt. Dummy Fill Polish Process Performance to Specification Polish Inputs Hardware Input Mod. Materials Input Mod. CMP Polish process versatility continues to enable new integration schemes. 13
14 Hardware Materials Endpoint Pressure/Velocity Slurry Pad Polymer Pore Groove Chemistry Delivery Temp. Control Conditioner Retaining Ring Each Process Input has a Structure/Property Model 14
15 CMP Pad Structure/Property Input Parameters Cell Periphery Log Scale (m) Device Features 10 nm Feature Arrays m Die level 5-20mm Wafer 300mm Critical Length Scales 15
16 CMP Pad Structure/Property Input Parameters Cell Periphery Log Scale (m) Polymer Chains nm Device Features 10 nm Polymer Domains nm Pad Porosity m Feature Arrays m Pad Groove m Die level 5-20mm Polish Element mm Wafer 300mm Pad Rebound mm Structure/Property relationships can be deployed to design locally optimized CMP pads. 16
17 CMP Pad Input Parameter Optimization Polymer Chain Domain Pore Groove Experimental Inputs Feature Pad Rebound Structured DOE Performance Output Polish Process Pad Property Inputs Fixed Inputs Baseline Polish Recipe Inputs validated against Outputs. Results are developed into Pad Structure/Property Algorithms. 17
18 CMP Pad Design Optimization Polymer Chain Domain Pad Input Model Pore Feature Groove Pad Rebound Experimental Inputs Structured DOE Performance Output Polish Process Fixed Inputs Baseline Polish Recipe Pad Property Inputs Rigorous Modeling efforts allow for targeted optimization of CMP Inputs and improvement to Die level Performance Outputs. 18
19 SMART CMP Polymer Chain Domain SMART CMP Pore Groove Dynamic Process Control Feature Pad Rebound Input Models AI Polish Process SMART CMP: Input Parameter Model optimized AI deployed using Dynamic Process Control. 19
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